Abstract
The ultimate goal of lithography is to produce a resist mask that will serve for the local processing of a lower structural layer. Figure 6-1 shows the cross section of part of a resist mask. The length of the base, W 2, is taken as the mask width, since the mask covers the surface of the structural layer in this space, preserving the W2-wide portion of the surface when processing through the resist mask. The width W 2 < 1 μm of a band on a mask must be evaluated from two different perspectives. First, we can compare W 2 with the width WM of a dark band on the mask-photostencil pattern (in a 1:1 scale or an n-fold reduction). The algebraic difference ΔW = W 2 -WM can be called distortion. The amount of distortion and the other mask parameters depend to large degree on the properties of the optical system that transfers the photomask image onto the surface of the resist film as a two-dimensional intensity distribution I(x, y). Second, the size of W 2 is a function of the resist material parameters and the resist layer processing parameters. Uncontrolled variations in the resist film parameters and its processing modes will produce variations in W 2 even when the light I(x, y) is invariant. Ordinarily, we assume that the relative error in linewidth reproduction in a resist mask cannot exceed 10%. As a result, we must face the problem of revealing those factors that cause deviations in W 2 and of defining the necessary accuracy with which these factors must be controlled when resist processing procedures, excluding exposure, are performed.
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© 1992 Springer Science+Business Media New York
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Valiev, K.A. (1992). Procedures for Processing Exposed Resist Films and Resist Mask Topography. In: The Physics of Submicron Lithography. Microdevices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3318-4_7
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DOI: https://doi.org/10.1007/978-1-4615-3318-4_7
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