Abstract
In this chapter we will examine the issues in obtaining bright sources of electrons and forming electron beams of submicron cross section. Thermionic emission and field emission are the usual methods of obtaining electron beams having a brightness on the order of 106 A/cm2-steradian. The first sections of this chapter discuss the physics of these processes (Sections 1–5). Subsequent sections discuss electron optics as a method of forming a beam having a submicron cross section; in this presentation we will in part follow the sources.(1–8)
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References
V. E. Cosslett, Introduction to Electron Optics [Russian translation], Inostrannaya Literatura, Moscow (1950).
L. A. Artsimovich and S. Yu. Luk’yanov, Charged Particle Motion in Electric and Magnetic Fields [in Russian], Nauka, Moscow (1978).
P. W. Hawkes, Electron Optics and Electron Microscopy [Russian translation], Mir, Moscow (1974).
F. R. Brewer (editor), Electron Beam Technology in Microelectronic Fabrication, Academic Press, New York (1980).
S. Reed, Electron Probe Microanalysis [Russian translation], Mir, Moscow (1979).
L. A. Baranova and S. Ya. Yavor, Electrostatic Electron Lenses [in Russian], Nauka, Moscow (1986).
V. K. Popov and S. N. Yachmenev, The Design and Analysis of Electron and Ion Lithography Equipment [in Russian], Radio i Svyaz’, Moscow (1985).
I. Brodie and J. J. Muray, The Physics of Microfabrication, Plenum Press (1982).
C. Kittel, Introduction to Solid State Physics [Russian translation], Nauka, Moscow (1978).
D. R. Herriot and G. R. Brewer, Electron Beam Technology in Microelectronic Fabrication, Academic Press, New York (1980), pp. 141–216.
D. M. Goebel, Y. Hirooka, and T. A. Sketchley, Rev. Sci. Instrum., 56, No. 9, 1717–1722 (1985); D. M. Goebel, Y. Hirooka, and G. A. Campbell, Rev. Sci. Instrum., 56, No. 10, 1888–1893 (1985).
R. L. Gordon, J. Appl. Phys., 56, No. 1, 810–813 (1984).
R. Chow and W. A. Tiller, J. Appl. Phys., 55, No. 5, 1339–1352 (1984).
K. W. Hadley and P. J. Donders, J. Appl. Phys., 57, No. 7, 2617–2625 (1985).
R. S. Khairnar, D. S. Joag, S. K. Kulkarni, A. S. Nigavecar, and P. L. Kanitkar, Rev. Sci. Instrum., 55, No. 9, 1505–1507 (1984).
Y. Furukawa, M. Yamabe, T. Ishizuka, and T. Inagaki, J. Appl. Phys., 52, No. 1, 533–534 (1981).
A. R. Shul’man and S. A. Fridrikhov, Secondary Emission Methods in the Study of Solid State [in Russian], Nauka, Moscow (1977).
L. N. Dobretsov, Electron and Ion Emission [in Russian], Gostekhizdat, Moscow-Leningrad (1952).
H. Boersch, Z. Phys., B 139, 115–146 (1954).
W. Leger, Z. Phys., B 171, 424–435 (1963).
V. A. Zhukov and K. A. Kalabushev, Mikroelektronika, 11, No. 4, 316–325 (1982).
M. I. Elinson and G. F. Vasil’ev, Field Emission of Electrons [in Russian], Fizmatgiz, Moscow (1958).
A. A. Sokolov, Yu. M. Loskutov, and I. M. Ternov, Quantum Mechanics [in Russian], Uchpedgiz, Moscow (1962).
L. W. Nordheim, Phyz. Z., B 30, No. 4, 177–196 (1929).
K. Fujii, S. Zaima, Y. Shibata, H. Adachi, and S. Otani, J. Appl. Phys., 57, No. 5, 1723–1728 (1985); H. Adachi, K. Fujii, S. Zaima, Y. Shibata, S. Oshima, S. Otani, and Y. Ischizawa, Appl. Phys. Lett., 43, 540–543 (1980).
J. C. Wolfe, IEEE J., SC-15, No. 4, 540–543 (1980).
H. Pinna, K. Liang, M. Denizart, and B. Jouffrey, Rev. Phys. Appl., 18, 659–665 (1983).
B. V. Bondarenko, Yu. L. Rybakov, E. P. Sheshin, and A. A. Shchuka, Electronic Technology, Ser. 4: High Vacuum Electronic and Gas Discharge Devices, No. 4, 1–56 (1981).
B. V. Bondarenko, E. P. Sheshin, and A. A. Shchuka, Foreign Electronic Technology, No. 2, 3–43 (1979).
B. V. Bondarenko, Electronic Technology, Ser. 4: High Vacuum Electronic and Gas Discharge Devices, No. 6, 3–9 (1982).
B. V. Bondarenko, Electronic Technology, Ser. 1: Very High Frequency Electronics, No. 9, 3–9 (1980).
D. A. Kirkpatrick, R. E. Shefer, and G. Bekefi, J. Appl. Phys., 57, No. 11, 5011–5016 (1985).
K. H. Bayliss and R. V. Latham, Vacuum, 35, No. 6, 211–217 (1985).
D. M. Goebel, Y. Hirooka, and G. A. Campbell, Rev. Sci. Instrum., 56, No. 10, 1888–1893 (1985).
D. B. Langmuir, Proc. IRE, No. 25, 971–991 (1937).
V. S. Lukoshkov, Zh. Tekh. Fiz., 6, 26–30 (1936).
I. E. Tamm, Fundamentals of Electricity [in Russian], Gostekhizdat, Moscow (1954).
J. Caldwell, J. Appl. Phys., 57, No. 1, 6–9 (1985).
K. Saito, T. Okubo, T. Takamoto, Y. Uno, and M. Kondo, J. Vac. Sci. Technol., A4, No. 4, 1913–1917 (1986).
G. F. Rempfer, J. Appl. Phys., 57, No. 7, 2385–2401 (1985).
M. Szilagyi, S. J. Yakowitz, and M. O. Duff, Appl. Phys. Lett., 44, No. 1, 7–9 (1984).
M. Szilagyi, Appl. Phys. Lett., 45, No. 5, 499–501 (1985).
G. Hess and S. Humphries, Jr., J. Appl. Phys., 60, No. 5, 1569–1576 (1986).
P. Loschialpo, W. Namkung, M. Reiser, and J. D. Lawson, J. Appl. Phys., 57, No. 1, 10–17 (1985).
E. L. O’Neill, Introduction to Statistical Optics, Addison-Wesley, Palo Alto (1963).
V. I. Kotov and V. V. Miller, Focusing and Isolation Relative to the Mass of High Energy Particles [in Russian], Atomizdat, Moscow, (1969).
F. Eraoto, K. Gamo, S. Namba, N. Samoto, and R. Shimizu, Jap. J. Appl. Phys., 24, No. 10, 809–811 (1985).
P. Riemenschneider, Q. Bui, A. Grohs, C. Jenzen, P. Landmeier, D. Morgan, D. Cumming, and M. Purvis, J. Vac. Sci. Technol., 4, No. 1, 68–72 (1986).
M. Hassel Shearer, H. Takemura, M. Isobe, N. Goto, K. Tanaka, and S. Miyauchi, J. Vac. Sci. Technol., B4, No. 1, 64–67 (1986).
D. P. Kern, P. J. Coane, P. J. Houzego, and T. H. P. Chang, Solid State Technol., 127–131, Feb. (1984).
S. Hosaka, M. Ichihashi, H. Hayakawa, S. Nishi, and M. Migitaka, Jap. J. Appl. Phys., 21, No. 3, 543–549 (1982).
K. Iwadate, R. Yamaguchi, K. Hirata, and K. Harada, 30th Intern. Symp. Electron, Ion, and Photon Beams, May 27–30, USA (1986).
E. de Chambost, B. Allanos, A. Frichet, J. Perrocheau, D. S. Alles, C. J. Biddick, J. H. Bruning, J. T. Clemens, et al., J. Vac. Sci. Technol., B4, No. 1, 73–77 (1986).
E. de Chambost, A. Frichet, M. Chartier, H. Ja The, and J. Trotel, J. Vac. Sci. Technol., B4, No. 1, 78–82 (1986).
M. Essig and H. C. Pfeiffer, J. Vac. Sci. Technol., B4, No. 1, 83–85 (1986).
I. Brodie, E. R. Westerberg, D. R. Cone, J. J. Muray, N. Williams, and L. Gasiorek, IEEE Trans. Elect. Dev., 28, No. 11, 422–428 (1981).
B. J. G. M. Roelofs, J. B. Le Poole, J. E. Barth, and C. B. de Gruyter, Proc. Microcircuit Eng. Cong., Cambridge, UK, Academic Press, New York (1983), pp. 91–98.
B. J. G. M. Roelofs, and J. E. Barth, Microelectronic Engineering, 2, No. 4, 259–279 (1984).
W. Kulke, Methods and Materials in Microelectronic Technology, J. Barton (editor), Plenun Press, New York-London (1984), pp. 127–144.
R. Ward, A. R. Franklin, P. A. Gould, and M. J. Plummer, J. Vac. Sci. Technol., 19, No. 4, 966 (1982).
R. Ward, A. R. Franklin, I. H. Lewin, and P. A. Gould, and M. J. Plummer, J. Vac. Sci. Technol., B4, No. 1, 89–93 (1986).
W. R. Livesay and L. B. Anderson, J. Vac. Sci. Technol., B4, No. 1, 100–104 (1986).
K. A. Valiev, L. V. Velikov, R. Kh. Makhmutov, and A. V. Rakhov, Dokl. Akad. Nauk SSSR, 262, No. 6, 1377–1380 (1982).
K. A. Valiev, L. V. Velikov, S. D. Dushenkov, R. Kh. Makhmutov, A. V. Rakhov, and N. Yu. Ustinov, Mikroelektronika, 11, No. 5, 447–450 (1982).
H. Bohlen, J. Greschner, J. Keyser, W. Kulke, and P. Nehmiz, IBM J. Res. Develop., 26, No. 5, 568–579 (1982).
G. N. Flerov and V. S. Barashenkov, Usp. Fiz. Nauk, 114, 351 (1974).
K. A. Valiev, L. V. Velikov, R. Kh. Makhmutov, and A. M. Prokhorov, Pis’ma Zh. Tekh. Fiz., 11, No. 17, 1048–1053 (1985).
K. A. Valiev, L. V. Velikov, R. Kh. Makhmutov, and A. M. Prokhorov, Dokl. Akad. Nauk SSSR, 284, No. 3, 595–598 (1985).
P. Nehmiz, U. Behringer, H. Bohlen, and M. Kallmeyer, J. Vac. Sci. Technol., B1, 1023 (1983).
P. Nehmiz, W. Zapka, U. Behringer, M. Kallmeyer, and H. Bohlen, J. Vac. Sci. Technol., B3, No. 1, 136–139 (1985).
W. Zapka, P. Nehmiz, and H. Bohlen, J. Vac. Sci. Technol., B3, No. 1, 140–143 (1985).
U. Behringer and P. Wettiger, J. Vac. Sci. Technol., B4, No. 1, 94–99 (1986).
P. K. Hansma and J. Tersoff, J. Appl. Phys., 61, No. 2, R1–R23 (1987).
J. Bardeen, Phys. Rev. Lett., 6, 57 (1961).
G. Binnig, H. Rohrer, C. Gerber, and E. Weibel, Phys. Rev. Lett., 49, 57 (1982).
G. Binnig and H. Rohrer, Surf. Sei, 126, 236 (1983).
G. Binnig, H. Rohrer, C. Gerber, and E. Weibel, Phys. Rev. Lett., 50, 120 (1983).
M. A. McCord and R. F. W. Pease, J. Vac. Sci. Technol., B4, No. 1, 86–88 (1986).
M. A. McCord and R. F. W. Pease, J. Vac. Sci. Technol., B3, No. 1, 198–201 (1985).
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Valiev, K.A. (1992). Forming Electron Beams of Submicron Cross Section. In: The Physics of Submicron Lithography. Microdevices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3318-4_2
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DOI: https://doi.org/10.1007/978-1-4615-3318-4_2
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