Lateral Surface Superlattices
As semiconductor technology continues to pursue the scaling down of integrated circuit dimensions into the submicron and ultrasubmicron regimes, many novel and interesting questions will emerge concerning the physics of charged particles in semiconductors. One of the more important topics to be considered is that of carrier confinement in structures that reduce the dimensionality of the system. Notable among these structures are MOS quantized inversion layers discussed in previous chapters and the heterojunction superlattice. In particular, the fabrication of the quantum well superlattice has been possible due to the advent of MBE and MOCVD technology, which we have discussed previously.
KeywordsLandau Level Inversion Layer Periodic Potential Negative Differential Conductivity Bloch Oscillation
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