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Transient Hot-Carrier Transport

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Physics of Submicron Devices

Part of the book series: Microdevices ((MDPF))

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Abstract

When a system with many time constants is excited by a temporally varying forcing function, the system’s response can exhibit a variety of features such as overshoots, undershoots, and phase shifts. When the forcing function varies slowly on the scale of the time constants, it is common to use quasi-static analysis techniques in which the instantaneous time-varying response is modeled by using the steady-state response of the system to a constant forcing function equal in magnitude to the actual instantaneous forcing function. For the transport problems considered here, the system is an ensemble of carriers embedded in a set of energy bands and interacting with a phonon bath. The time constants include energy and momentum relaxation times or various scattering rates, the forcing function is the electric field, and the response of greatest interest is the ensemble average carrier velocity. The quasi-static analysis technique is the use of a steady-state drift-diffusion transport law. The response of the ensemble in situations where this steady-state or quasi-static analysis is inappropriate is called the transient dynamic response (TDR). Describing carrier transport in the TDR regime is the central topic of this chapter.

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  1. College of Engineering and Applied Science Center for Solid State Electronics Research, Arizona State University, Tempe, Arizona, USA

    David K. Ferry & Robert O. Grondin

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Ferry, D.K., Grondin, R.O. (1991). Transient Hot-Carrier Transport. In: Physics of Submicron Devices. Microdevices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3284-2_5

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