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Epitaxy of Solid Solutions and Multilayered Structures in the System Cd—Hg—Te

  • Chapter
Growth of Crystals

Part of the book series: Poct Kphctannob, Rost Kristallov, Growth of Crystals ((GROC,volume 18))

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Abstract

Solid solutions CdxHg1—xTe (CMT) are one of the principal IR microphotoelectronics materials. Quantum-sized multilayered CdTe—HgTe structures are viewed as the most promising for fabricating photodetectors using “band engineering.” With respect to the structural and electrophysical parameters of the CMT films, all common epitaxial methods give the same excellent results. The carrier mobility in n-type Cd0.2Hg0.8Te reaches µ 77 ≥ 2 ·105 cm2 •V/sec at a concentration n ≤ 1015 cm-3. Therefore, liquid-phase epitaxy, metalorganic chemical vapor deposition (MOCVD), sublimational—diffusional gas-phase epitaxy, and molecular-beam epitaxy (MBE) are equally capable of satisfying the demands of traditional photoelectronics in high-quality CMT layers. The single method of preparing quantum-sized structures and superlattices (SL) until very recently was MBE. The advantage of MBE for growing SL based on CMT is the low growth temperature compared to other epitaxy methods. The interdiffusion coefficients of HgTe and CdTe are relatively large. Interdiffusion of the layer components can destroy the SL. If the interdiffusion coefficients of HgTe and CdTe given in the literature are used [1], the calculated thickness of the diffusion layers at 200°C is 0.1-1.0 nm. Superlattices based on CMT can be grown by MBE at 200°C. This growth temperature cannot be exceeded substantially without destroying the sharpness of the composition change at the boundaries of the SL layers. In MOCVD, use of photoactivation [2], precracking [3], flame excitation of the reaction mixture [4], and nontraditional organometallic compounds [5] enabled the CdTe growth temperature to be lowered to 250-200°C (and even to 85°C for HgTe). Thus, ultrathin layers could be synthesized [6]. The development of a hydride MBE method using organometallic compounds, like that already used for A3B5, seems logical.

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Authors
  1. Yu. G. Sidorov
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  2. S. I. Chikichev
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Editors and Affiliations

  1. Shubnikov Institute of Crystallography, Russian Academy of Sciences, Moscow, Russia

    E. I. Givargizov  & S. A. Grinberg  & 

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Sidorov, Y.G., Chikichev, S.I. (1992). Epitaxy of Solid Solutions and Multilayered Structures in the System Cd—Hg—Te. In: Givargizov, E.I., Grinberg, S.A., Wester, D.W. (eds) Growth of Crystals. Poct Kphctannob, Rost Kristallov, Growth of Crystals, vol 18. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3268-2_8

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  • DOI: https://doi.org/10.1007/978-1-4615-3268-2_8

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