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Role of Growth Dislocations in Forming Inhomogeneous Properties in Gallium Arsenide Single Crystals

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Growth of Crystals

Part of the book series: Poct Kphctannob, Rost Kristallov, Growth of Crystals ((GROC,volume 18))

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Abstract

Fabrication of very large ultrafast integrated circuits has sharpened the need for highly homogeneous semiconductors. The great promise of microelectronics is tied to semi-insulating GaAs. However, it has been found that single crystals grown from the melt have inhomogeneous bulk properties. This inhomogeneity correlates on the macro-and microscale with the dislocation distribution. The problem of preparing large dislocation-free GaAs single crystals has not yet been solved even under laboratory conditions. Mass production of single crystals with a relatively high dislocation density (104-105 cm-2) will require methods for decreasing the inhomogeneity of properties. For this, the reasons and mechanisms of formation of the inhomogeneities due to growth dislocations will have to be understood. In the present work, experimental data are used to analyze critically previously proposed mechanisms of formation of the inhomogeneity. A model is presented for formation of micro-and macroinhomogeneous crystal properties. The model is based on the assumption that intrinsic point defects (IPD) recombine quickly near dislocations.

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Authors
  1. A. V. Markov
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  2. M. G. Mil’vidskii
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  3. V. G. Osvenskii
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Editors and Affiliations

  1. Shubnikov Institute of Crystallography, Russian Academy of Sciences, Moscow, Russia

    E. I. Givargizov  & S. A. Grinberg  & 

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Markov, A.V., Mil’vidskii, M.G., Osvenskii, V.G. (1992). Role of Growth Dislocations in Forming Inhomogeneous Properties in Gallium Arsenide Single Crystals. In: Givargizov, E.I., Grinberg, S.A., Wester, D.W. (eds) Growth of Crystals. Poct Kphctannob, Rost Kristallov, Growth of Crystals, vol 18. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3268-2_16

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  • DOI: https://doi.org/10.1007/978-1-4615-3268-2_16

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-0-306-18118-4

  • Online ISBN: 978-1-4615-3268-2

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