Abstract
Conditions under which foreign inclusions are captured or repulsed by a growing crystal have been studied in great detail. Depending on the ratio of crystal, melt, and particle surface energies γ sl , γ sp , γ lp , the particles can be steadily repulsed by the crystal [1, 2]. There exists a certain critical velocity V c , below which repulsion is possible and above which the particle can be captured. The absolute value of V c depends substantially on the melt viscosity [2, 3], the ratio of heat conductivities of the particle and melt [4], the material and dimensions of the particle [2, 3], and the surface state of the crystal [5]. The thermocapillary force for certain temperature gradients in the melt can determine whether attraction occurs [6]. Gravity [7] as well as the particle size are also important. The Brownian motion of submicron particles (R < 10-4 cm) must be considered [8].
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Fedorov, O.P. (1992). Interaction of Crystals Growing in the Melt with Inclusions and Concentration Inhomogeneities. In: Givargizov, E.I., Grinberg, S.A., Wester, D.W. (eds) Growth of Crystals. Poct Kphctannob, Rost Kristallov, Growth of Crystals, vol 18. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3268-2_15
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DOI: https://doi.org/10.1007/978-1-4615-3268-2_15
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