Abstract
The starting composition of a substance, as a rule the average relative concentration of the components, is one of the parameters determining the surface state during growth of single crystals from fluxes or the vapor phase onto a substrate. However, the average does not always coincide with the local concentration not only in the bulk but also at the surface. Moreover, the interfacial concentration is known [1 –4] to depend nonlinearly on the starting (bulk) concentration. The local composition, numerically equal to the average concentration, can under certain conditions correspond to an unstable state of the developing surface. Such instability can cause local disruption of the starting stoichiometry both along the surface and at a distance from the surface. It has not yet been investigated at which compositions and temperatures and in which systems such disruptions are possible. The present work attempts to examine this problem.
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Ambrok, A.G., Kalashnikov, E.V. (1992). Concentrational Instability of the Interface. In: Givargizov, E.I., Grinberg, S.A., Wester, D.W. (eds) Growth of Crystals. Poct Kphctannob, Rost Kristallov, Growth of Crystals, vol 18. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3268-2_1
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DOI: https://doi.org/10.1007/978-1-4615-3268-2_1
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