Skip to main content

Reliability Benefits of I DDQ

  • Chapter
IDDQ Testing of VLSI Circuits

Abstract

This is an application-oriented article on I DDQ to guide test engineers to a pragmatic method of implementing I DDQ . This article focuses on different aspects of I DDQ testing; quality, reliability, and test implementation. A description of I DDQ is presented, with different practical methods of implementing it, with empirical reliability data of I DDQ failures, and with empirical burn-in data identifying potential yield benefits. Employing I DDQ testing on digital CMOS technology, the user obtains a product with greater reliability. The data presented within this article, along with increasing customer focus on zero defects, clearly support IDDQ implementation.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 84.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 109.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD 109.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. P. Weiss, “Do we meet world-class quality standards?,” Computer Design/News Edition, pp. 1–23, September 10, 1990.

    Google Scholar 

  2. B. Rayner, “Market driven quality: IBM’s six sigma crusade,” Electronic Business, pp. 68–76, October 15, 1990.

    Google Scholar 

  3. L.K. Horning, J.M. Soden, R.R. Fritzemier, and C.R Hawkins, ‘Measurements of quiescent power supply current for CMOS ICs in production testing,” Proc. Int. Test Conf., pp. 300–309, September 1987.

    Google Scholar 

  4. J.A. Segura, V.H. Champac, R. Rodriguez, J.A. Rubio, and J. Figueras, “On current testing of gate oxide short failure in static memory cell,” Internal Report, Department of Engineering, University of Barcelona, Spain.

    Google Scholar 

  5. M. Lane and S. McEuen, “IDDQ: A method for detecting potential warranty returns,” Ford Microelectronics Inc., Internal Report, August 27, 1990.

    Google Scholar 

  6. J. Soden and C. Hawkins, “Test considerations for gate oxide shorts in CMOS ICs,” IEEE Design & Test, pp. 56–64, August 1986.

    Google Scholar 

  7. C. Hawkins and J. Soden, “Reliability and electrical properties of gate oxide shorts in CMOS ICs,‘” Proc. Int. Test Conf., pp. 443–451, 1986.

    Google Scholar 

  8. J. Soden and C. Hawkins, “Reliability of CMOS ICs with gate oxide shorts,” Semiconductor Int., pp. 240–245, May 1987.

    Google Scholar 

  9. J. Soden, R. Treece, M. Taylor, and C. Hawkins,” CMOS IC stuck-open fault electrical effects and design considerations,” Proc. Int. Test Conf., 1989.

    Google Scholar 

  10. C. Hawkins, J. Soden, R. Fritzemier, and L. Horning, “Quiescent power supply current measurements for CMOS IC defect detection” IEEE Trans, on Industrial Electronics, vol. 36, pp. 211–218, 1989.

    Article  Google Scholar 

  11. M. Keating and D. Meyer, “A new approach to dynamic IDD testing,” Proc. Int. Test Conf., pp. 316–321, 1987.

    Google Scholar 

  12. C. Crapuchettes, “Testing CMOS I DD on large devices,” Proc. Int. Test Conf., pp. 310–315, 1987.

    Google Scholar 

  13. W. Maly and P. Nigh, “Built-in current testing feasibility study,” Proc. ICCAD, pp. 340–343, 1989.

    Google Scholar 

  14. W. Mao, R. Gulati, D. Goel, and M. Ciletti, “Quietest: A quiescent current testing methodology for detecting leakage faults,” Proc. ICCAD, pp. 280–283, 1990.

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Editor information

Editors and Affiliations

Rights and permissions

Reprints and permissions

Copyright information

© 1992 Springer Science+Business Media Dordrecht

About this chapter

Cite this chapter

McEuen, S.D. (1992). Reliability Benefits of I DDQ . In: Gulati, R.K., Hawkins, C.F. (eds) IDDQ Testing of VLSI Circuits. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3146-3_4

Download citation

  • DOI: https://doi.org/10.1007/978-1-4615-3146-3_4

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4613-6377-4

  • Online ISBN: 978-1-4615-3146-3

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics