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Growth of GaAs Single Crystals at High Gravity

  • Bojun Zhou
  • Funian Cao
  • Lanying Lin
  • Wenju Ma
  • Yun Zheng
  • Feng Tao
  • Minglun Xue
Chapter

Abstract

Two GaAs single crystals were grown on a centrifuge at 3g, 6g and 9g acceleration. Impurity striations and dislocations were observed for different gravity conditions. Temperature oscillations in molten Sn indicated that the conditions used to grow GaAs single crystals showed depressing temperature oscillations. A possible reason is given for the increase of dislocation density of GaAs with increasing centrifugal force in a sandblasted quartz boat.

Keywords

Dislocation Density Temperature Oscillation Gravity Condition High Gravity Centrifugal Acceleration 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1994

Authors and Affiliations

  • Bojun Zhou
    • 1
  • Funian Cao
    • 1
  • Lanying Lin
    • 1
  • Wenju Ma
    • 2
  • Yun Zheng
    • 2
  • Feng Tao
    • 2
  • Minglun Xue
    • 2
  1. 1.Institute of SemiconductorsChinese Academy of SciencesBeijingChina
  2. 2.Institute of MechanicsChinese Academy of SciencesBeijingChina

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