Abstract
Centrifuge chemical vapor transport experiments under 5 and 10 g produced growth of GaAs on [001] GaAs substrate oriented with a macrostructure typical of diffusion-controlled growth. A current hypothesis for this phenomenon is that Coriolis and gravity gradient forces produced by the centrifugal motion can effectively damp buoyancy-driven convective flows.
Numerical simulation using spectral methods was carried out for axisymmetric flow regimes, and was compared to experiments.
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Launay, JC., Bouchet, S., Randriamampianina, A., Bontoux, P., Gibart, P. (1994). Modeling and Experiments on Epitaxial Growth on a GaAs Hemisphere Substrate at 1 g and under Hypergravity. In: Regel, L.L., Wilcox, W.R. (eds) Materials Processing in High Gravity. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-2520-2_15
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DOI: https://doi.org/10.1007/978-1-4615-2520-2_15
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