Modeling and Experiments on Epitaxial Growth on a GaAs Hemisphere Substrate at 1 g and under Hypergravity

  • Jean-Claude Launay
  • Stéphanie Bouchet
  • Anthony Randriamampianina
  • Patrick Bontoux
  • Pierre Gibart


Centrifuge chemical vapor transport experiments under 5 and 10 g produced growth of GaAs on [001] GaAs substrate oriented with a macrostructure typical of diffusion-controlled growth. A current hypothesis for this phenomenon is that Coriolis and gravity gradient forces produced by the centrifugal motion can effectively damp buoyancy-driven convective flows.

Numerical simulation using spectral methods was carried out for axisymmetric flow regimes, and was compared to experiments.


Outer Cylinder Radial Location Spectral Space Centrifugal Acceleration Gravity Level 
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Copyright information

© Springer Science+Business Media New York 1994

Authors and Affiliations

  • Jean-Claude Launay
    • 1
    • 2
  • Stéphanie Bouchet
    • 1
  • Anthony Randriamampianina
    • 3
  • Patrick Bontoux
    • 3
  • Pierre Gibart
    • 4
  1. 1.PRAME - AërospatialeSt.Médard-en-Jalles CédexFrance
  2. 2.Laboratoire de Chimie du Solide du CNRSUniversité de Bordeaux 1Talence CédexFrance
  3. 3.Institut de Mécanique des Fluides - CNRSMarseilleFrance
  4. 4.Laboratoire de Physique du Solide et Energie et Energie Solaire - CNRSParc Sophia AntipolisValbonneFrance

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