The Role of Thermal Stress In Vertical Bridgman Growth of CdZnTe Crystals
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Computational studies of thermal fields and resulting thermoelastic stress fields were undertaken for the vertical Bridgman-Stockbarger growth of CdZnTe crystals. Companion experimental studies included the growth of crystals grown with the same process parameters and the same geometry as the process modeled in the computations. Characteristics of the crystals grown were compared with the computational predictions. Predictions of growth ampoule outer wall temperatures agree well with thermocouple data taken during the growth experiment. Additionally, the computed excess stress distribution resulting from the thermoelastic stress history in the solid is seen to agree qualitatively with synchrotron contour topography on a slice taken from the grown ingot. The computational models are shown to provide a good tool for the study of the influence of process parameters on the quality of crystals grown by this method, at least as far as thermal stress influences the defect distribution. The influence of low-g and high-g environments on growth is discussed.
KeywordsCritical Resolve Shear Stress Excess Stress Thermoelastic Stress Compute Temperature Thermocouple Location
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