Abstract
The advantages of galvanic deposition of semiconductors in the production of solar cells are described and possible mechanisms of film growth are discussed. As typical examples fit for the galvanic formation of semiconducting coatings Cu(I) sulfide and Cu(I) selenide have been investigated. The anodic formation of copper (I) sulfide layers composed of relatively large twinned crystals by anodic oxidation of copper in electrolytes containing sulfide anions can be achieved by using high process temperatures and relatively low current densities. The galvanically deposited semiconductor layers are characterised by impedance spectroscopy (copper selenide) and current voltage curves of photovoltaic cells (Cu2S/CudS). Copper (I) selenide layers are p-type doped with a dopant density of 8.43 1015 cm-3. The photovoltaic characteristics of Cu2S/CdS cells are still disappointing as the diode behaviour of the cell is still poor due to a partial short circuit of the diode of unknown origin.
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© 1995 Springer Science+Business Media New York
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Becker-Roes, D., Fischer, A., Schimmel, M., Wendt, H. (1995). Galvanic Deposition of Photovoltaic Compound Semiconductor Coatings. In: Lapicque, F., Storck, A., Wragg, A.A. (eds) Electrochemical Engineering and Energy. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-2514-1_8
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DOI: https://doi.org/10.1007/978-1-4615-2514-1_8
Publisher Name: Springer, Boston, MA
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