Transistors

  • Theo G. van de Roer
Part of the Microwave Technology Series book series (MRFT, volume 10)

Abstract

The bipolar transistor has since its invention in 1948 undergone a continuous development, and its frequency limits have been pushed upward steadily. In particular the invention of planar silicon technology has increased the possibilities for reducing device dimensions. As we will see this is essential for reaching higher frequencies. In this technology the impurities are diffused via a mask into the surface of the silicon. The diffusion depth can be controlled by time and temperature and is of the order of 1 μm. By two subsequent diffusions of acceptors and donors a cross-section such as that in Fig. 6.1(a) is obtained. The doping profiles have the form of Fig. 6.1(b). Since bipolar transistors are treated extensively in many textbooks we will here only discuss those properties that are essential for microware applications.

Keywords

Phosphorus Microwave Recombination Arsenic GaAs 

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References

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Further Reading

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    de Cogan, D. (1987) Solid State Devices: A Quantum Physics Approach, Springer, New York.CrossRefGoogle Scholar
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    Neamen, D. A. (1992) Semiconductor Physics and Devices: Basic Principles, Irwin, Homewood, IL.Google Scholar
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    Sze, S. M. (1981) Physics of Semiconductor Devices, 2nd edn, Wiley, New York.Google Scholar
  4. 4.
    Hess, K. (1988) Advanced Theory of Semiconductor Devices, Prentice-Hall, Englewood Cliffs, NJ.Google Scholar
  5. 5.
    Pengelly, R. S. (1986) Microwave Field Effect Transistors — Theory, Design and Applications, Wiley, Chichester, New York.Google Scholar
  6. 6.
    Soares, R., Graffeuil, J. and Obregon J. (eds) (1983) Applications of GaAs Mesfets, Artech, Dedham, MA.Google Scholar
  7. 7.
    Thomas, H., Morgan, D. V., Thomas, B., Aubrey, J. E. and Morgan G. B. (eds) (1986) Gallium Arsenide for Devices and Integrated Circuits, IEE Electronic Materials and Devices Series 3, Peregrinus, London.Google Scholar
  8. 8.
    Morgan, D. V. and Williams R. H. (eds) (1991) Physics and Technology of Heterojunction Devices, IEE Electronic Materials and Devices Series 8, Peregrinus, London.Google Scholar

Copyright information

© Springer Science+Business Media Dordrecht 1994

Authors and Affiliations

  • Theo G. van de Roer
    • 1
  1. 1.Associate Professor in Electrical EngineeringEindhoven University of TechnologyEindhovenThe Netherlands

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