Ion Damage of Quasicrystalline Thin Films of Al.83Mn.17
Thin films (0.6μm - 3.2μm) of Al.83Mn.17 were RF sputtered onto silicon crystal and vitreous S1O2 substrates at ∼ 300K and ∼ 545K. These films were then masked and ion-damaged with Si+ ions at 77K to a dose of 5 x 1014/cm2 and 5 x l015/cm2at energies calculated to penetrate uniformly the entire thickness of each film. X-ray scans were done at the Brookhaven NSLS (beamline X22C) using a grazing incident/grazing exit geometry to keep the scattering wave vector essentially in the plane of the film. The most striking results indicate that S(Q) for the damaged quasicrystalline film (deposited at 545K) is very similar to S(Q) for the as-sputtered, and presumably microquasicrystalline, state deposited at 300K.
KeywordsQuartz Enthalpy Argon Calorimetry Sine
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