Abstract
The basic features of photostimulated epitaxy have been reviewed [1]. It has been demonstrated that the crystallization rates of epitaxial films during irradiation by light with wavelengths in the range 0.25–1.2μ m increase several times compared with equivalent epitaxial processes and that the substrate surface is effectively cleaned and partially recrystallized before the growth.
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References
S. N. Maksimovskii, “Photostimulated epitaxy,” in: Growth of Crystals, Vol. 17, E. I. Givargizov and S. A. Grinberg (eds.), Consultants Bureau, New York (1991), pp. 23–33.
N. N. Loiko, S. N. Maksimovskii, and A. P. Shotov, “Evaporation of GaAs by light irradiation,” Kratk. Soobshch. Fiz., No. 8, 11–13(1988).
L. L. Chang, L. Esaki, and W. E. Howard, “Structures grown by molecular beam epitaxy,” in. Vac. Sci. Technol, 10, No. 5, 655–662 (1973).
G. H. Olsen and M. Ettenberg, “Features of preparing AIIIBv heteroepitaxial structures,” in: Growth of Crystals, Vol. 2 [Russian translation], Mir, Moscow (1981), pp. 9–76.
G. A. Somorjai and D. W. Jepsen, “Evaporation of CdS single crystals,” J. Chem. Phys., 41, No. 3, 1389–1399 (1964).
S. N. Maximovsky, I. P. Revokatova, and M. A. Selezneva, “Photostimulated epitaxy of II—VI and IV—VI layers,” J. Cryst. Growth, 52, No. 1, 141–145 (1981).
L. Hollan, J. P. Hallais, and J. C. Brice, “The preparation of GaAs,” Curr. Top. Mater. Sci., 5, 1–217 (1980).
E. W. Chase, R. T. Hepplewhite, D. C. Krupka, and D. Kahng, “Electroluminescence of ZnS lumocen devices containing rare-earth and transition metal fluorides,” J. Appl. Phys., 40, No. 6, 2512–2519 (1969)
J. Benoit, P. Benalloul, and B. S. Blanzat, “Rare-earth complex dopants in ax. thin-film electroluminescent cells,” J. Lumin., No. 23, 175–190 (1981).
S. N. Maksimovskii, P. P. Sidorov, and A. P. Shotov, “Luminescent films of ZnSerYb, ZnSe:Dy, and ZnS:Tm grown by photostimulated epitaxy,” Kratk. Soobshch. Fiz., No. 8, 45–46 (1988).
V. G. Artyushenko, “Polycrystalline optical fibers for the middle IR region,” Tr. Inst. Obshch. Fiz., Akad. Nauk, 15, 3–18 (1988).
R. F. C. Farrow, “MBE growth of II-VI and IV-VI compounds and alloys,” in: NATO ASI Ser, Ser. E, 87 (Molecular-Beam Epitaxy and Heterostructures), 1985, pp. 227–262.
D. A. Cammack, R. J. Dalby, H. J. Cornellisen, and J. Khurgin, “Electron beam pumped lasing in ZnSe/ZnSSe superlattice structures grown by MBE,” J. Appl. Phys., 62, No. 7, 3071–3074 (1987).
N. Mino, M. Kobayashi, M. Konagai, and K. Takahashi, “Epitaxial growth of high-quality ZnSe on Si substrates by MBE and application to DC electroluminescent cells,” J. Appl Phys., 58, No. 2, 793–796 (1985).
T. Yokogawa, M. Ogura, and T. Kajiwara, “ZnSe/ZnS heteroepitaxial growth using an intermediate strained-layer superlattice buffer,” J. Appl. Phys., 62, No. 7, 2843–2847 (1987).
S. N. Maksimovskii, P. P. Sidorov, and A. P. Shotov, “Luminescence ofZnSe/Si and ZnSe/ZnS heterostructures grown by photostimulated epitaxy,” Kratk. Soobshch. Fiz., No. 8, 43–44 (1988).
S. N. Maksimovskii, P. P. Sidorov, and A. P. Shotov, “Properties of strained ZnSe grown on Si and ZnS substrates by photostimulated epitaxy,” Kratk. Soobshch. Fiz., No. 3, 38–40 (1989).
M. Enatsu, M. Shimizu, T. Mizuki, et al., “Photoluminescence study of GaAs grown directly on Si substrates,” Jpn. J. Appl. Phys., 26, No. 9, L1468–L1471 (1987).
R. Fischer, H. Morcok, D. A. Newman, et al., “Material properties of high-quality GaAs epitaxial layers grown on Si substrates,” J. Appl. Phys., 60, No. 5, 1640–1648 (1986).
T. S. Wagner, C. H. Heckelman, and H. Nelkowski, “Optical reflectivity and electronic structure of ZnSSe mixed crystals,” Phys. Status Solidi B, 65, No. 1, K75–K77 (1974).
R. V. Alves, R. A. Buchanan, K. A. Wickersheim, and E. A. C. Yates, “Neodymium-activated lanthanum oxysulfide: A new high-gain laser material,” J. Appl. Phys., 42, No. 8, 3043–3048 (1971).
T. G. Maple and R. A. Buchanan, “RF-sputtered luminescent rare-earth oxysulfide crystals,” J. Vac. Sci. TechnoL, 10, No. 5, 616–620 (1973).
R. J. Baughman, “Czochralski growth of lanthanum oxysulfide single crystals,” Mater. Res. Bull, 8, No. 12, 1421–1425 (1973).
S. N. Maksimovskii and P. P. Sidorov, “Films of La and Y oxysulfides grown from the vapor,” Kratk. Soobshch. Fiz., No. 9, 32–33 (1988).
L. E. Sobon, K. A. Wickersheim, R. A. Buchanan, and R. V. Alves, “Growth and characterization of lanthanum oxysulfide single crystals,” J. Appl. Phys., 42, No. 8, 3049–3053 (1971).
Yu. M. Golovin and A. A. Tkachenko, “Interpretation of the vibrational spectrum and force field of La oxysulfide,” Zh. Neorg. Khim., 32, No. 12, 2895–2898 (1987).
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Maksimovskii, S.N., Sidorov, P.P. (1993). Use of Photostimulated Vaporization During Growth of A2B5, A2B6, and A4B6 Films. In: Givargizov, E.I., Grinberg, S.A. (eds) Growth of Crystals. Growth of Crystals, vol 19. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-2379-6_3
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DOI: https://doi.org/10.1007/978-1-4615-2379-6_3
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