Abstract
BiCMOS technology offers enhanced performance compared to CMOS at 5 V power supply voltage. Many high-speed BiCMOS SRAMs, gate arrays, ASICs, etc. have been fabricated [1]. In this chapter, we present a variety of BiCMOS logic circuits suitable for 3.3 and sub-3.3 V. The potential gates for digital applications are identified. The chapter starts with the introduction of the conventional BiCMOS (totem-pole) gate which is used in 5 V applications. The degradation of this gate, with supply voltage scaling, is demonstrated. In Section 5.2, we introduce the BiNMOS family suitable for low-voltage applications. Other logic families, for low power supply voltage operation, are discussed in Section 5.3. Low-voltage digital applications of BiCMOS are identified. The reader is referred to BiCMOS books [2, 3] to get more familiar with BiCMOS circuits.
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References
A. R. Alvarez, “BiCMOS Technology and Applications,” Kluwer Academic Pub., MA, Second Edition, 1993.
S. H. K. Embabi, A. Bellaouar and M. I. Elmasry, “BiCMOS Digital Integrated Circuit Design”, Kluwer Academic Pub., MA, 1993.
M. I. Elmasry, “Design and Analysis of BiCMOS ICs”, IEEE Press, 1994.
G. P. Rosseel, and R. W. Dutton, “Influence of Device Parameters on the Switching Speed of BiCMOS Buffers,” IEEE Journal of Solid-State Circuits, vol. 24, no. 1, pp. 90–99, February 1989.
P. Raje, K. Chan, and K. Saraswat, “BiCMOS Gate Performance Optimization using Unified Delay Model,” Symposium on VLSI Technology, Tech. Dig., pp. 91–92, 1990.
S. H. K. Embabi, A. Bellaouar, and M. I. Elmasry, “Analysis and Optimization of BiCMOS Digital Circuit Structures,” IEEE Journal of Solid-State Circuits, vol. 26, no. 4, pp. 676–679, April 1991.
P. A. Raje, K. C. Saraswat and K. M. Cham, “Performance-driven Scaling of BiCMOS Technology”, IEEE Trans, on Electron Devices, ED-39, no. 3, pp. 685–693, March 1992.
J. Gallia, et al., “High-Performance BiCMOS 100K-Gate Array,” IEEE Journal of Solid-State Circuits, vol. 25, no. 1, pp. 142–149, February 1990.
Y. Nishio, et al., “A BiCMOS Logic Gate with Positive Feedback,” International Solid-State Circuits Conference, Tech. Dig., pp. 116–117, February 1989.
A. E. Gamal et al., “BiNMOS a Basic Cell for BiCMOS Logic Circuits”, in Custom Integrated Circuits Conf., Tech. Dig., pp. 8.3.1–8.3.4., 1989.
H. Hara et al., “0.5-um 2M-Transistor BiPNMOS Channelless Gate Array”, IEEE Journal Solid-State Circuits, vol. 26, no. 11, pp. 1615–1620, November 1991.
H. Hara et al., “0.5-um 3.3-V BiCMOS Standard Cells with 32-kb Cache and Ten-Port Register File”, IEEE Journal Solid-State Circuits, vol. 27, no. 11, pp. 1579–1584, November 1992.
M. I. Elmasry, and A. Bellaouar, “BiCMOS at Low-Supply Voltage,” in IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 89–96, October 1993.
P. Raje, et al., “MBiCMOS: A Device and Circuit Technique for Sub-micron, sub-2 V Regime,” International Solid-State Circuits Conference, Tech. Dig., pp. 150–151, 1991.
P. G. Y. Tsui et al., “Study of BiCMOS Logic Gate Configurations for Improved Low-Voltage Performance”, IEEE Journal Solid-State Circuits, vol. 28, no. 3, pp. 371–374, March 1993.
S. W. Sun et al., “A Fully Complementary BiCMOS Technology for Sub-Half-Micrometer Microprocessor Applications”, IEEE Trans. Electron Devices, vol. 39, no. 12, pp. 2733–2739, December 1992.
K. Yano et al., “Quasi-Complementary BiCMOS for Sub-3V Digital Circuits”, IEEE Journal Solid-State Circuits, vol. 26, no. 11, pp. 1708–1719, November 1991.
A. Watanabe et al., “Future BiCMOS Technologies for Scaled Supply Voltage”, International Electron Devices Meeting, Tech. Dig., pp. 429–433, December 1989.
H. J. Shin et al., “Full-swing CBiCMOS Logic Circuits”, in IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Tech. Dig. pp. 229–233, September 1989.
A. Bellaouar, I. S. Abu-Khater, M. I. Elmasry, and A. Chekima, “Full-Swing Schottky BiCMOS/BiNMOS and the Effects of Operating Frequency and Supply Voltage Scaling,” IEEE Journal of Solid-State Circuits, vol. 29, no. 6, pp. 693–700, June 1994.
S. H. K. Embabi, A. Bellaouar, M. I. Elmasry, and R. A. Hadaway, “New Full-Voltage-Swing BiCMOS Buffers”, IEEE Journal Solid-State Circuits, vol. 26, no. 2, pp. 150–153, February 1991.
M. Hiraki et al., “A 1.5-V Full-Swing BiCMOS Logic Circuit”, IEEE Journal Solid-State Circuits, vol. 27, no. 11, pp. 1568–1574, November 1992.
R. Y. V. Chik and C. A. T. Salama, “1.5 V Bootstrapped BiCMOS Logic Gate”, IEE Electronic Letters, Vol. 29, No. 3, pp. 307–309, February 1993.
S. H. K. Embabi, A. Bellaouar, and K. Islam, “A Bootstrapped Bipolar CMOS (B 2 CMOS) Gate for Low Voltage Applications,” IEEE Journal of Solid-State Circuits, vol. 30, no. 1, pp. 47–53, January 1995.
A. Bellaouar, M. I. Elmasry, and S. H. K. Embabi, “Bootstrapped Full-Swing BiCMOS/BiNMOS Logic Circuits for 1.2-3.3 V Supply Voltage Regime,” IEEE Journal of Solid-State Circuits, vol. 30, no. 6, June 1995.
J. Shutz, “A 3.3 V 0.6 µm BiCMOS Superscalar Microprocessor,” IEEE International Solid-State Circuits Conference, Tech. Dig., pp. 202–203, 1994.
F. Murabayashi, et al., “3.3 V, Novel Circuit Techniques for a 2.8-Million-Transistor BiCMOS RISC Microprocessor,” IEEE Custom Integrated Circuit Conference, Tech. Dig., pp. 12.1.1–12.1.4, May 1993.
K. Ueda, H. Suziki, K. Suda, Y. Tasujihashi, H. Shinohara, “A 64-bit Adder By Pass Transistor BiCMOS Circuit,” IEEE Custom Integrated Circuit Conference, Tech. Dig., pp. 12.2.1–12.2.4, May 1993.
K. Ogiue, et al., “A 15 ns/250 mW 64K Static RAM,” in ICCD, Tech. Dig., pp. 17–20, 1985.
H. Tran et al., “An 8-ns 1-Mb ECL BiCMOS SRAM with a Configurable Memory Array Size,” International Solid-State Circuits Conf. Tech. Dig., pp. 36–37, February 1989.
M. Matsui et al., “An 8-ns 1-Mb ECL BiCMOS SRAM,” International Solid-State Circuits Conf., Tech. Dig., pp. 38–39, February 1989.
Y. Maki et al., “A 6.5-ns 1 Mb BiCMOS ECL SRAM,” International Solid-State Circuits Conf. Tech. Dig., pp. 136–137, February 1990.
M. Takada et al., “A 5-ns 1-Mb ECL BiCMOS SRAM,” IEEE Journal of Solid State Circuits, vol. 25, no. 5, pp. 1057–1062, October 1990.
A. Ohba et al., “A 7-ns 1-Mb BiCMOS ECL SRAM with Program-Free Redundancy,” in Symp. VLSI Circuits Conf. Tech. Dig., pp. 41–42, May 1990.
Y. Okajima et al., “A 7-ns 4-Mb BiCMOS SRAM with a ParaUel Testing Circuit,” International Solid-State Circuits Conf. Tech. Dig., pp. 54–55, February 1991.
N. Tamba et al., “A 1.5 ns 256Kb BiCMOS SRAM with 11K 60 ps Logic Gates,” International Solid-State Circuits Conf., Tech. Dig., pp. 246–247, February 1993.
K. Nakamura et al., “A 200-MHz Pipelined 16-Mb BiCMOS SRAM with PLL Proportional Self-Timing Generator,” IEEE Journal of Solid-State Circuits, vol. 29, no. 11, pp. 1317–1322, November 1994.
G. Kitsukawa, et al., “An Experimental 1-Mb BiCMOS DRAM,” IEEE Journal of Solid-State Circuits, vol. SC-22, no. 5, pp. 657–662, October 1987.
S. Watanabe, et al, “BiCMOS Circuit Technology for High Speed DRAMs,” Symposium on VLSI Circuits, Tech. Dig., pp. 79–80, 1987.
G. Kitsukawa, et al., “Design of ECL 1-Mb BiCMOS DRAM,” Electronics and Communications in Japan, Part 2, vol. 75, no. 5, pp. 89–102, 1992.
M. Nomura et al., “A 300-MHz, 16-bit, 0.5-µm BiCMOS Digital Signal Processor Core LSI,” IEEE Custom Integrated Circuits Conference, Tech. Dig., pp. 12.6.1–12.6.4, May 1993.
T. Inoue, et al., “A 300-MHz 16-bit BiCMOS Video Signal Processor,”, IEEE Journal of Solid-State Circuits, vol. 28, no. 12, pp. 1321–1329, December 1993.
F. Murabayshi, et al., “A 0.5 micron BiCMOS Channelless Gate Array,” IEEE Custom Integrated Circuits Conference, Tech. Dig., pp. 8.7.1–8.7.4, May 1989.
H. Hara, et al., “A 350 ps 50K 0.8 micron BiCMOS Gate Array with Shared Bipolar Cell Structure,” IEEE Custom Integrated Circuits Conference, Tech. Dig., pp. 8.5.1–8.5.4, May 1989.
J. D. Gallia, et al., “High-Performance BiCMOS 100K-Gate Array,” IEEE Journal of Solid-State Circuits, vol. 25, no. 1, pp. 142–149, February 1990.
T. Hanibuchi, et al., “A Bipolar-PMOS Merged Basic Cell for 0.8 micron BiCMOS Sea of Gates,” IEEE Journal of Solid-State Circuits, vol. 26, no. 3, pp. 427–431, March 1991.
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Bellaouar, A., Elmasry, M.I. (1995). Low-Voltage VLSI BiCMOS Circuit Design. In: Low-Power Digital VLSI Design. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-2355-0_5
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DOI: https://doi.org/10.1007/978-1-4615-2355-0_5
Publisher Name: Springer, Boston, MA
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