Monitoring Transistor Degradation

  • Sorin Cristoloveanu
  • Sheng S. Li
Chapter
Part of the The Springer International Series in Engineering and Computer Science book series (SECS, volume 305)

Abstract

In this chapter, two main issues concerning SOI technologies are addressed. On the one hand, SOI circuits are dedicated radiation-hard devices that do not suffer from any competition with bulk Si. On the other hand, the interface degradation, induced by hot-carrier injection into the gate oxide, is an intrinsic problem and a primary challenge for both Si and SOI transistors. The way this problem is alleviated, using simple and inexpensive processing and design solutions, is considered to be a strong argument in favor of a given technology.

Keywords

Attenuation Recombination Resis SIMOX 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. [1]
    S. Cristoloveanu, “Physical mechanisms of hot-carrier-induced degradation in deep-submicron MOSFETs,” ESSDERC’93 Conf. Proc. J. Borel, P. Gentil, J.P. Noblanc, A. Nouailhat, and M. Verdone (eds.), Ed. Frontières, Gif-sur-Yvette, France, p. 797, 1993.Google Scholar
  2. [2]
    P. Heremans, R. Bellens, G. Groeseneken, A.. v. Schwerin, W. Weber, M. Brox, and H.E. Maes, “The mechanisms of hot carrier degradation,” in Hot Carrier Design Considerations for MOS Devices and Circuits C.T. Wang (ed.), Van Nostrand Reinhold, New York, 1992.Google Scholar
  3. [3]
    S. Cristoloveanu, H. Haddara, and N. Revil, “Defect localization induced by hot carrier injection in short-channel MOSFETs: concept, modeling and characterization,” Microelectron. Reliability vol. 33, p. 1365, 1993.CrossRefGoogle Scholar
  4. [4]
    H. Haddara and S. Cristoloveanu, “Two-dimensional modeling of locally damaged short-channel MOSFETs operating in the linear region,” IEEE Trans. Electron Devices vol. 34, p. 378, 1987.CrossRefGoogle Scholar
  5. [5]
    T. Ouisse, S. Cristoloveanu, and G. Borel, “Hot carrier-induced degradation of the back interface in short-channel silicon-on-insulator MOSFETs,” IEEE Electron Device Lett. vol. 12, p. 290, 1991.CrossRefGoogle Scholar
  6. [6]
    H. Haddara and S. Cristoloveanu, “Parameter extraction method for in-homogeneous MOSFETs, locally damaged by hot carrier injection,” Solid-State Electron. vol. 31, p. 1573, 1988.CrossRefGoogle Scholar
  7. [7]
    A. Hassein-Bey and S. Cristoloveanu, “Modelling and characterization of submicron p-channel MOSFETs locally degraded by hot carrier injection,” INFOS’91 Conf. Proc. Adam Hilger, Bristol, UK, p. 251, 1991.Google Scholar
  8. [8]
    N.S. Saks, P.L. Heremans, L. Van Den Hove, H.E. Maes, R.F. de Keersmaecker, and G.J. Declerck, “Observation of hot-hole injection in NMOS transistors using a modified floating-gate technique,” IEEE Trans. Electron Devices vol. 33, p. 1529, 1986.CrossRefGoogle Scholar
  9. [9]
    B. Zhang, A. Balasinsky, and T.P. Ma, “Hot-carrier effects on gateinduced-drain-leakage (GIDL) current in thin-film SOI/NMOSFETs,” IEEE Electron Device Lett. vol. 15, p. 169, 1994.CrossRefGoogle Scholar
  10. [10]
    J.R. Morante, A. Herms, J. Samitier, A. Cornet, and E. Lora-Tamayo, “Optical and thermal cross-sections of interface states from photocapacitance measurements,” Solid-State Electron. vol. 293, p. 1195, 1986.CrossRefGoogle Scholar
  11. [11]
    C. Hu, S.C. Tam, F.C. Hsu, P.K. Ko, T.Y. Chan, and K.W. Terrill, “Hotelectron-induced MOSFET degradation—model, monitor, and improvement,” IEEE Trans. Electron Devices vol. 32, p. 375, 1985.CrossRefGoogle Scholar
  12. [12]
    S. Cristoloveanu, S.M. Gulwadi, D.E. Ioannou, G.J. Campisi, and H.L. Hughes, “Hot-electron-induced degradation of front and back channels in partially and fully depleted SIMOX MOSFETs,” IEEE Electron Device Lett. vol. 13, p. 603, 1992.CrossRefGoogle Scholar
  13. [13]
    S. Cristoloveanu and T. Ouisse, “Properties of SIMOX and related systems,” in The Physics and Chemistry of Si02 and the Si-Sí02 Interface C.R. Helms and B.E. Deal (eds.), Plenum Press, New York, p. 309, 1993.Google Scholar
  14. [14]
    P.K. Hurley, S. Hall, and W. Eccleston, “Electron trapping in Si02formed by oxygen implantation,” IEEE Electron Device Lett. vol. 13, p. 238, 1992.CrossRefGoogle Scholar
  15. [15]
    A.G. Revesz, V.V. Afanas’ev, and H.L. Hughes, “Photo-injection studies of buried oxide layers in SIMOX and BESOI structures,” 1993 IEEE Int. SOI Conf. Proc. p. 24, 1993.Google Scholar
  16. [16]
    E. Guichard, S. Cristoloveanu, G. Reimbold, and G. Borel, “Detailed analysis of buried oxide degradation induced by hot-carrier injection,” ESSDERC’93 Conf. Proc. J. Borel, P. Gentil, J.P. Noblanc, A. Nouailhat, and M. Verdone (eds.), Ed. Frontières, Gif-sur-Yvette, France, p. 825, 1993.Google Scholar
  17. [17]
    A. Karmann, G. Reimbold, and S. Cristoloveanu, “Degradation and relaxation of the buried oxide in SIMOX MOSFETs,” in Silicon-On-Insulator Technology and Devices S. Cristoloveanu (ed.), The Electrochemical Society, Pennington, NJ, p. 351, 1994.Google Scholar
  18. [18]
    J.P. Colinge, “Hot-electron effects in silicon-on-insulator n-channel MOSFETs,” IEEE Trans. Electron Devices vol. 34, p. 2173, 1987.CrossRefGoogle Scholar
  19. [19]
    G. Reimbold and A.J. Auberton-Hervé, “Aging analysis of nMOS of a 1.3µm partially depleted SIMOX technology; comparison with a 1.3-Am bulk technology,” IEEE Trans. Electron Devices vol. 40, p. 364, 1993.CrossRefGoogle Scholar
  20. [20]
    J.Y. Choi, R. Sundaresan, and J.G. Fossum, “Monitoring hot-electroninduced degradation in floating-body SOI MOSFETs,” IEEE Electron Device Lett. vol. 11, p. 156, 1990.CrossRefGoogle Scholar
  21. [21]
    E. Guichard, S. Cristoloveanu, G. Reimbold, and G. Borel, “Full analysis of alternating injection in SOI transistors: comparison to bulk transistors,” IEDM’9.4 Techn. Digest p. 315, 1994.Google Scholar
  22. [22]
    L.T. Su, H. Fang, J.E. Chung, and D.A. Antoniadis, “Hot-carrier effects in fully-depleted SOI nMOSFETs,” IEDM’92 Techn. Digest p. 349, 1992.Google Scholar
  23. [23]
    O. Faynot, S. Cristoloveanu, A-J. Auberton-Hervé, and G. Reimbold, “Hot-carrier degradation in ultra-thin fully-depleted accumulation-mode SIMOX n-MOSFETs,” Microelectron. Eng. vol. 22, p. 407, 1993.CrossRefGoogle Scholar
  24. [24]
    Y. Ohmura and K. Izumi, “Hot-carrier immunity of a 0.1—am—gate ultrathin-film MOSFET/SIMOX,” SSDM’92 Conf. Proc. p. 496, 1992.Google Scholar
  25. [25]
    D. Flandre, P. Francis, J.P. Colinge, and S. Cristoloveanu, “Comparison of hot-carier effects in thin-film SOI and gate-all-around accumulation-mode p-MOSFETs,” 1993 IEEE Int. SOI Conf. Proc. p. 160, 1993.Google Scholar
  26. [26]
    A. Hassein-Bey and S. Cristoloveanu, “Simulation of interface coupling effects in ultra-thin silicon on insulator MOSFETs,” COMPEL vol. 11, p. 513, 1992.CrossRefGoogle Scholar
  27. [27]
    A. Zaleski, D.E. Ioannou, G.J. Campisi, and H.L. Hughes, “Successive charging/discharging of gate oxides in SOI MOSFETs by sequential hot-electron stressing of front/back channel,” IEEE Electron Device Lett. vol. 14, p. 435, 1993.CrossRefGoogle Scholar
  28. [28]
    A. Yoshino, T.P. Ma, and K. Okumura, “Hot-carrier effects in fully depleted submicrometer NMOS/SIMOX as influenced by back interface degradation,” IEEE Electron Device Lett. vol. 13, p. 522, 1992.CrossRefGoogle Scholar
  29. [29]
    D. Hervé, J.L. Leray, and R. Devine, “Comparative study of radiation induced electrical and spin active defects in buried SiO2 layers,” J. Appl. Phys. vol. 72, p. 3634, 1992.CrossRefGoogle Scholar
  30. [30]
    F.T. Brady and S.S. Li, “Radiation-induced charge trapping in implanted buried oxides,” J. Appl. Phys. vol. 68, p. 6143, 1990.CrossRefGoogle Scholar
  31. [31]
    T. Ouisse, S. Cristoloveanu, and G. Borel, “Electron trapping in irradiated SIMOX buried oxides,” IEEE Electron Device Lett. vol. 12, p. 312, 1991.CrossRefGoogle Scholar
  32. [32]
    A.M. Ionescu, S. Cristoloveanu, A. Chovet, P. Jarron, E. Heijne, F. Faccio, and G. Rossi, “A systematic investigation of radiation effects in MOS/SIMOX structures,” Microelectron. Eng. vol. 22, p. 391, 1993.CrossRefGoogle Scholar
  33. [33]
    T. Ouisse, S. Cristoloveanu, and G. Borel, “Influence of series resistances and interface coupling on the transconductance of fully-depleted siliconon-insulator MOSFETs,” Solid-State Electron. vol. 35, p. 141, 1992.CrossRefGoogle Scholar
  34. [34]
    T. Ouisse, G. Ghibaudo, J. Brini, S. Cristoloveanu, and G. Borel, “Investigation of floating body effects in silicon-on-insulator metal-oxidesemiconductor field-effect transistors,” J. Appl. Phys. vol. 70, p. 3912, 1991.CrossRefGoogle Scholar
  35. [35]
    S. Cristoloveanu, D.E. Ioannou, R.K. Lawrence, G.J. Campisi, and H.L. Hughes, “Asymmetrical irradiation effects in SIMOX MOSFETs,” RADECS’93 Conf. Proc. IEEE, p. 373, 1994.Google Scholar

Copyright information

© Springer Science+Business Media New York 1995

Authors and Affiliations

  • Sorin Cristoloveanu
    • 1
  • Sheng S. Li
    • 2
  1. 1.Polytechnic Institute of GrenobleFrance
  2. 2.University of FloridaUSA

Personalised recommendations