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Monitoring Transistor Degradation

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Electrical Characterization of Silicon-on-Insulator Materials and Devices

Part of the book series: The Springer International Series in Engineering and Computer Science ((SECS,volume 305))

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Abstract

In this chapter, two main issues concerning SOI technologies are addressed. On the one hand, SOI circuits are dedicated radiation-hard devices that do not suffer from any competition with bulk Si. On the other hand, the interface degradation, induced by hot-carrier injection into the gate oxide, is an intrinsic problem and a primary challenge for both Si and SOI transistors. The way this problem is alleviated, using simple and inexpensive processing and design solutions, is considered to be a strong argument in favor of a given technology.

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Authors and Affiliations

  1. Polytechnic Institute of Grenoble, France

    Sorin Cristoloveanu

  2. University of Florida, USA

    Sheng S. Li

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  1. Sorin Cristoloveanu
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© 1995 Springer Science+Business Media New York

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Cristoloveanu, S., Li, S.S. (1995). Monitoring Transistor Degradation. In: Electrical Characterization of Silicon-on-Insulator Materials and Devices. The Springer International Series in Engineering and Computer Science, vol 305. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-2245-4_10

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  • DOI: https://doi.org/10.1007/978-1-4615-2245-4_10

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-0-7923-9548-5

  • Online ISBN: 978-1-4615-2245-4

  • eBook Packages: Springer Book Archive

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