Monitoring Transistor Degradation
In this chapter, two main issues concerning SOI technologies are addressed. On the one hand, SOI circuits are dedicated radiation-hard devices that do not suffer from any competition with bulk Si. On the other hand, the interface degradation, induced by hot-carrier injection into the gate oxide, is an intrinsic problem and a primary challenge for both Si and SOI transistors. The way this problem is alleviated, using simple and inexpensive processing and design solutions, is considered to be a strong argument in favor of a given technology.
KeywordsThreshold Voltage Gate Oxide Electrical Characterization Interface Trap Electron Trapping
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