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Abstract

Clearly the lowest level noise present on semiconductor chips is due to electronic device noise caused by the random movement of charges through resistances, across transistor junctions, and random fluctuations in the charge recombinations in surface states and the semiconductor bulk. The level of noise generated and coupled by thermal noise, avalanche noise, shot noise, and 1/f noise represents a minimum level in coupled noise and all other noise mechanisms treated are usually orders of magnitude worse than these without special design. It is difficult enough to produce an amplifier with a rating of lnano-volt/root Hz or less with device noise alone. Their control is accomplished mainly through optimum circuit design and topology with bandwidth limiting of signals and semiconductor process control. The circuit effects of chip thermal gradients, mechanical or piezoelectric stress, hot electrons effects, and mobile Ionics such as sodium, can be considered very low frequency noise or noise coupling. Their control is usually accomplished with careful consideration of chip isotherms and mechanical stress lines, circuit design and biasing, balanced physical layout, and process control.

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© 1995 Springer Science+Business Media New York

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Verghese, N.K., Schmerbeck, T.J., Allstot, D.J. (1995). Sources of Noise and Methods of Coupling. In: Simulation Techniques and Solutions for Mixed-Signal Coupling in Integrated Circuits. The Springer International Series in Engineering and Computer Science, vol 302. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-2239-3_2

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  • DOI: https://doi.org/10.1007/978-1-4615-2239-3_2

  • Publisher Name: Springer, Boston, MA

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