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Fundamentals of Semiconductor Processing Technology pp 527–590Cite as

Contact and Interconnect Technology

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Abstract

The preceding chapters described how to define p- and n-type doped regions in single crystal and polycrystalline material. Those regions are the basic elements of semiconductor devices that must be connected in a specific configuration to form the desired circuit. The circuit must also be accessible to the “outside world” through conducting pads for testing with metal probes and for bonding to metal pins to complete the packaged chip. While doped silicon and polysilicon conduct electricity, they are of limited use for interconnections, mainly because of their prohibitively large resistance and lack of interconnecting flexibility. Therefore, at least one low-resistance conductor film must be deposited and patterned to contact and interconnect the different regions on the chip. Several single- and multi-metal systems are available for this purpose. Because of its high conductivity, compatibility with a silicon-base technology, and low processing cost, aluminum is the most widely used interconnect material.

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Abbreviations

IRPS:

International Reliability Physics Symposium.

VMIC:

VLSI Multilevel Interconnection Conference

IEDM:

International Electron Dvice Meeting.

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    J. G. Ryan

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Ryan, J.G. (1995). Contact and Interconnect Technology. In: Fundamentals of Semiconductor Processing Technology. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-2209-6_8

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