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Abstract

The electrical properties of semiconductor crystals can be modified predictably by introducing controllable amounts of dopant impurities into substitutional sites of the crystal. In silicon, for example, the most electronically active substitutional impurities are elements from group III (boron) and group V (arsenic, phosphorus, antimony) of the periodic table. When boron is in excess, holes are created for conduction and the crystal is said to be p-type. For excess arsenic, phosphorus, or antimony, free electrons are created for conduction and the crystal is called p-type. The most commonly used methods to introduce impurities into a semiconductor are doping during crystal or epitaxial growth (Chaps. 1,3), ion implantation, and diffusion. The basic principle of ion implantation in semiconductor technologies is described by Shockley [1]. It is a low-temperature process in which ionized dopants are accelerated to energies high enough so that when they impact on a target wafer’s surface they penetrate to a certain depth. Solid-state diffusion describes the method of introducing impurities into the wafer and/or redistributing them within the solid material by activating their motion at elevated temperature.

Keywords

Amorphous Layer Target Atom Nuclear Collision Projected Range Implantation Energy 
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Copyright information

© Springer Science+Business Media New York 1995

Authors and Affiliations

  • Badih El-Kareh
    • 1
  1. 1.IBM CorporationUSA

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