Consistent Low-Energy Reduction of the Three-Band Model for Electrons and Holes in Copper Oxides to the Effective t - J Model

  • V. I. Belinicher
  • A. L. Chernyshev
  • L. V. Popovich

Abstract

The problem of the structure of the charge carriers remains the key problem for the high-temperature superconductors on the basis of copper oxides. Its complexity is caused by strong correlations in the motion of electrons which cannot be considered as free particles in the framework of the band theory. These correlations are the reason that at half filling copper oxides are the Mott insulators or, more rigorously, the charge-transfer insulators in contrast with metal in an uncorrelated case. Adding of the electrons or holes to the Cu02 planes makes the system a doped semiconductor with the short-range antiferromagnetic order.

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References

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    V.I. Belinicher and A.L. Chernyshev, Phys. Rev. B47:390(1993).ADSCrossRefGoogle Scholar
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    V.I. Belinicher and A.L. Chernyshev, Physica C213:298(1993).ADSGoogle Scholar
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    V.I. Belinicher and A.L. Chernyshev, Phys. Rev. B49:9746(1994).ADSCrossRefGoogle Scholar
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Copyright information

© Springer Science+Business Media New York 1995

Authors and Affiliations

  • V. I. Belinicher
    • 1
  • A. L. Chernyshev
    • 1
  • L. V. Popovich
    • 1
  1. 1.Institute of Semiconductor PhysicsNovosibirskRussia

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