Self-Assembly in Epitaxial Semiconductor Alloys

  • K. Rajan
  • Y.-C. Chen
  • V. Bucklen
  • C. A. Wang
  • G. W. Charache
  • G. Nichols
  • M. Freeman
  • P. Sander


With the development of new optoelectronic device architectures and applications, there has been extensive interest in the fundamental issues governing phase stability in chemically complex epitaxial compound semiconductors. We review some of the recent experimental findings in this field, point out the importance of different microstructural length scales associated with the different types of phase instabilities, and introduce three-dimensional natural superlattices found in Ga1−xInxAsySb1−y/GaSb epitaxial heterostructures.


Liquid Phase Epitaxy Composition Modulation Phase Instability GaSb Substrate Coherent Noise 
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Copyright information

© Springer Science+Business Media New York 2000

Authors and Affiliations

  • K. Rajan
    • 1
  • Y.-C. Chen
    • 1
  • V. Bucklen
    • 1
  • C. A. Wang
    • 2
  • G. W. Charache
    • 3
  • G. Nichols
    • 3
  • M. Freeman
    • 3
  • P. Sander
    • 3
  1. 1.Department of Materials Science & EngineeringRensselaer Polytechnic InstituteTroyUSA
  2. 2.Lincoln LaboratoryMassachusetts Institute of TechnologyLexingtonUSA
  3. 3.Lockheed-MartinSchenectadyUSA

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