Abstract
Chemical-mechanical planarization (CMP) has found application in semiconductor processing as a method of controlling the planarity of the multiple metal and dielectric layers that form the IC interconnect structure [3.1, 3.2]. Nonplanarity is introduced to the wafer surface at the transistor isolation level and increases as the number of metal layers increases. CMP is the process of physically removing material from places of high topography to flatten and level the wafer surface. Figure 3.1 depicts nonplanarity increasing as metal layers increase, while Figure 3.2 depicts the ideal case of planar interconnect layers allowed by CMP.
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Borst, C.L., Gill, W.N., Gutmann, R.J. (2002). Chemical-Mechanical Planarization (CMP). In: Chemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-1165-6_3
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DOI: https://doi.org/10.1007/978-1-4615-1165-6_3
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