Abstract
Chemical vapor deposition (CVD) of diamond films at high gravity was first suggested by Regel in 1990. However, the prior methods for diamond CVD were unsuitable for mounting on a large centrifuge. All required a flowing gas system for hydrogen-hydrocarbon mixtures at low pressure, with the attendant gas cylinders, flow controllers, vacuum pump, and waste gas disposal system. Many required a plasma generator. In 1996, we described a new closed Chemical Vapor Transport (CVT) reactor that could deposit diamond films without continual addition of gas.1 Hot graphite is used as a carbon source in the presence of hydrogen at low pressure, without a metal filament or plasma. Under proper conditions, this technique has provided diamond growth rates an order of magnitude larger than the ~1 µm/h typical for diamond CVD processes. High-quality polycrystalline diamond was deposited on a wide variety of substrates, including silicon, glass, copper, molybdenum, gold, graphite and carbon felt.2 The deposits were not removed by the “scotch-tape test.” Patterned selective deposition was achieved on a copper pattern on oxidized silicon.3
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Regel, L.L., Wilcox, W.R. (2001). Influence of Centrifugation on Diamond Film Deposition By Chemical Vapor Transport. In: Regel, L.L., Wilcox, W.R. (eds) Processing by Centrifugation. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-0687-4_15
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DOI: https://doi.org/10.1007/978-1-4615-0687-4_15
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