Abstract
We grew diamond films on molybdenum and silicon substrates at ~900°C between 1 and 100 g using a Direct Current (DC) plasma Chemical Vapor Deposition (CVD) apparatus placed in a centrifuge. We characterized these films by scanning electron microscopy, X-ray diffraction method and Raman spectroscopy. We determined the influence of acceleration and gas composition on the nucleation density, morphology, and microstructure of the diamond.
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Nakazato, M., Suzuki, T., Nagasaka, Y., Abe, Y., Bellingeri, S., Maizza, G. (2001). Diamond Synthesized by DC-Plasma CVD at High Gravity. In: Regel, L.L., Wilcox, W.R. (eds) Processing by Centrifugation. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-0687-4_14
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DOI: https://doi.org/10.1007/978-1-4615-0687-4_14
Publisher Name: Springer, Boston, MA
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