An Integrated Plasma Equipment — Feature Evolution Model for Thin Film Etching Applications
Plasma assisted etching is a vital technology for microelectronics manufacturing. The quest for higher speed, denser circuitry and enhanced functionality in integrated circuits is pushing all microelectronics manufacturing processes including plasma etching to their limits. Transition towards new materials (e.g. Cu, low-k dielectrics), control of plasma damage mechanisms (e.g. charging) and new environmentally friendly etching chemistries (e.g. C4F6) are introducing additional challenges. It has therefore become imperative to thoroughly understand the plasma etching processes and the behavior of plasma equipment. Computational modeling is one tool that, in conjunction with experiments, can be invaluable in this quest. We have recently developed integrated plasma equipment - feature evolution models for investigating the physics and technology of plasma assisted etching. These models along with their application to c-C4F8 based dielectric etching are the focus of this paper.
KeywordsElectron Attachment Dissociative Attachment Thick Photoresist Plasma Etching Process Coil Power
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- 5.C. Winstead and V. McKoy, to be published.Google Scholar
- 6.W. L. Morgan, C. Winstead, and V. McKoy, to be published.Google Scholar
- 7.K. Waters, Infrared diode laser absorption spectroscopy measurement of gas phase radicals in c-C4F8 discharges for plasma model validation, MS Thesis, University of New Mexico (2000).Google Scholar
- 10.C. Q. Jiao, A. Garscadden, and P. D. Haaland, to be published.Google Scholar
- 12.S. Rauf and P. L. G. Ventzek, Model for an inductively coupled Ar/c-C4F8 plasma discharge, submitted to J. Vac, Sci. Technoi. A.Google Scholar
- 23.G. A. Hebner and P. A. Miller, to be published.Google Scholar