Abstract
SiLK (trademark of The Dow Chemical Company) semiconductor dielectric is a low-k organic polymer, based on the synthesis of crosslinked polyphenylenes by the reaction of poly functional cyclopentadienone- and acetylene-containing materials1. SiLK dielectric is used for high performance integrated circuits with subtractive Al/W 2–4 or Cu damascene 5–7 wiring technology. The properties of cured SiLK enable integration with current interlayer dielectric (ILD) processes: for example, high thermal stability, high Tg, low dielectric constant, no fluorine, spin-on application, good adhesion and mechanical durability, low moisture absorption, and solvent resistance. Some of these properties are listed in Table 1.
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Im, J., Townsend, P.H., Curphy, J., Karas, C., Shaffer, E.O. (2002). Mechanical Properties of Cured SiLK Low-K Dielectric Films. In: Sacher, E. (eds) Metallization of Polymers 2. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-0563-1_6
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DOI: https://doi.org/10.1007/978-1-4615-0563-1_6
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