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MTCMOS Combinational Circuits Using Sleep Transistors

  • Mohab Anis
  • Mohamed Elmasry

Abstract

The Multi-Threshold CMOS (MTCMOS) is a very attractive technique to reduce sub-threshold leakage currents during standby modes by utilizing high-V th power switches (sleep transistors). This technology is straightforward to use, because existing designs can be modified to become MTCMOS blocks by simply adding high-V th power supply switches. In addition, circuits can easily be placed in low leakage states at a fine grain level of control. For this reason, and because the time to market is critical, this technique gained the attention of the industry. Unlike the embedded MTCMOS designs discussed in Chapter 3, circuits employing high-V th sleep transistors do not require the re-designing of the original low-V th block.

Keywords

Leakage Power Hybrid Heuristic Virtual Ground Sleep Transistor Speed Degradation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 2003

Authors and Affiliations

  • Mohab Anis
    • 1
  • Mohamed Elmasry
    • 1
  1. 1.University of WaterlooCanada

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