Abstract
A resistive sensor, the performance of which is based on electron heating effect in semiconductors, for the measurement of high-power microwave pulse in a double-ridged waveguide has been developed. Finite-difference time-domain method was used for the calculation of electric field in the waveguide section with a sample made from n-type Si. Cross-sectional dimensions and specific resistance of the sensing element have been chosen to optimise the performance of the sensor. It was implemented in the waveguide WRD250 covering frequency range 2.60–7.80 GHz. Output signal dependence on pulse power and frequency response of the sensor have been measured.
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Acknowledgments
This research was funded by a grant MIP-092/2011 from the Research Council of Lithuania and by EU project No 284802 “Protection of Critical Infrastructures against High Power Microwave Threats” (HIPOW).
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Kancleris, Ž., Ragulis, P., Simniškis, R., Dagys, M. (2014). Resistive Sensor for High-Power Microwave Pulse Measurement in Double-Ridged Waveguide. In: Sabath, F., Mokole, E. (eds) Ultra-Wideband, Short-Pulse Electromagnetics 10. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-9500-0_33
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DOI: https://doi.org/10.1007/978-1-4614-9500-0_33
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