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Semiconductors as Laser Material 1: Fundamentals

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Abstract

The descriptive overview provided in this chapter is a prelude to the mathematical modeling of semiconductor and optical properties that follows in later chapters. Here, we discuss the relevant properties of semiconductor quantum wells from the point of view of applications for semiconductor lasers. First, we introduce the general idea that semiconductor lasers are composed of mixtures of semiconductors designed to select the appropriate lattice constant and bandgap. The physical limits of mixing of different semiconductors are covered. Practical factors that influence the use and fabrication of semiconductors for lasers including factors such as direct and indirect bandgaps, and strain and critical thickness, are discussed.

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Notes

  1. 1.

    However, researchers have demonstrated lasing through Raman scattering on Si. This breakthough may eventually lead to practical laser light sources on Si!

  2. 2.

    S. O. Kasap, Optoelectronics and Photonics: Principles and Practices. Upper Saddle River, NJ: Prentice Hall, 2001.

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Correspondence to David J. Klotzkin .

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© 2014 Springer Science+Business Media New York

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Klotzkin, D.J. (2014). Semiconductors as Laser Material 1: Fundamentals. In: Introduction to Semiconductor Lasers for Optical Communications. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-9341-9_3

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  • DOI: https://doi.org/10.1007/978-1-4614-9341-9_3

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  • Publisher Name: Springer, New York, NY

  • Print ISBN: 978-1-4614-9340-2

  • Online ISBN: 978-1-4614-9341-9

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