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Integration of Functional Oxides with Semiconductors pp 115–158Cite as

Growing SrTiO3 on Si (001) by Molecular Beam Epitaxy

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Abstract

This chapter is focused on the details of the epitaxial integration of SrTiO3 on Si, the only widely utilized direct epitaxy of a perovskite oxide on Si. The key enabling feature is the deposition of 1/2 monolayer of Sr on clean Si(001) 2 × 1 as a Zintl template for SrTiO3 growth. We discuss the reconstruction of Sr on Si (001) for the coverage range from 1/6 to 1 monolayer at both high and low temperatures, including the electronic structure changes occurring during the Sr Zintl template formation on Si(001) as observed by the Si 2p surface core-level shifts as a function of Sr coverage. We also discuss the details of the various processes by which one can achieve epitaxial SrTiO3 on Si as well as the possibility of residual strain control in SrTiO3 by interface oxidation. Finally, we provide a detailed discussion of the atomic and electronic structure of the SrTiO3/Si interface.

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  1. Department of Physics, The University of Texas at Austin, Austin, TX, USA

    Alexander A. Demkov & Agham B. Posadas

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  1. Alexander A. Demkov
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Demkov, A.A., Posadas, A.B. (2014). Growing SrTiO3 on Si (001) by Molecular Beam Epitaxy. In: Integration of Functional Oxides with Semiconductors. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-9320-4_6

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  • DOI: https://doi.org/10.1007/978-1-4614-9320-4_6

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