Abstract
The performance of semiconductor lasers is greatly affected by the properties of packaging materials, which mainly consist of diverse bonding solders, mounting substrates [1–4]. The selection of packaging materials is multidisciplinary and involves achieving a balance among device performance, reliability, manufacturability, and cost-effectiveness. In this chapter, the properties of solder materials, as well as mounting substrates employed in the packaging of high power semiconductor lasers are presented and the effects of material properties on the performance of semiconductor lasers are analyzed in details.
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References
C. Zweben, New, low-CTE, ultrahigh-thermal-conductivity materials for lidar laser diode packaging. Proc. SPIE 58870D(1–10) (2005)
V. Von, Thermal and Mechanical Optimisation Diode Laser Bar Packaging, PHD paper, Herstellung und Verlag: Books on Demand GmbH, Norderstedt (2007)
www.torreyhillstech.com Understanding of Laser, Laser diodes, Laser diode packaging and its relationship to Tungsten Copper; 6370 LUSK BLVD, SUITE F-11
A.C. Pliska, J. Mottin, N. Matuschek, C. Bosshard, Bonding semiconductor laser chips: substrate material figure of merit and die attach layer influence, Belgirate, Italy, (2005), pp. 28–30
F. Bachmann, P. Loosen, R. Poprawe, High Power Diode Lasers Technology and Applications (Springer Science + Business Media, LLC, New York, 2007)
D. Lorenzen, M. Schrer, J. Meusel, P. Hennig, H. Kig, M. Phillippens, J. Sebastian, R. Hülsewede, Comparative performance studies of indium and gold-tin packaged diode laser bars. Proc. SPIE 6104, 610404 (2006)
X.S. Liu, R.W. Davis, L.C. Hughes, M.H. Rasmussen, R. Bhat, C.E. Zah, A study on the reliability of indium solder die bonding of high power semiconductor lasers. J. Appl. Phys. 100, 013104(1–11) (2006)
J.L. Hostetler, C.L. Jiang, V. Negoita, T. Vethake, R. Roff, A. Shroff, C. Miester, U. Bonna, G. Charache, H. Schlüter, F. Dorsch, Thermal and strain characteristics of high-power 940 nm laser arrays mounted with AuSn and In solders. Proc. SPIE 6456(645602) 645602(1–12) (2007)
M. Wakaki, K. Kudo, T. Shibuya, Physical Properties and Data of Optical Materials (CRC Press, Boca Raton, FL, 2009)
G. Humpston, D.M. Jacobson, Advanced materials and processes. Indium Solders 163(4), 45–47 (2005)
http://www.coininginc.com/files/admin/english_gold_tin_paper.pdf
H. Okamoto, T.B. Massalski, The Au-Sn(Gold-Tin) System in Phase Diagram of Binary Gold Alloys (ASM International, Metals Park, OH, 1987), pp. 278–289
Q. Wang, S.-H. Choa, W. Kim, J. Hwang, S.K. Ham, C. Moon, Application of Au-Sn eutectic bonding in hermetic radio-frequency microelectromechanical system wafer level packaging. J. Electron. Mater. 35(3), 425–432 (2006)
H. Okamoto, T.B. Massalski, Binary Alloy Phase Diagrams (ASM International, Metals Park, OH, 1990)
S. Zama, D.F. Baldwin, T. Hikami, H. Murata, Flip Chip Interconnect Systems Using Wire Stud Bumps and Lead Free Solder. Proceedings of 50th Electronic Components and Technology Conference, Las Vegas, May 2000
H. Oppermann, The Role of Au/Sn Solder in Packaging Materials for Information Technology (Springer, London, 2005), pp. 377–390
A. Debski, W. Gasior, Z. Moser, R. Major, Enthalpy of formation of intermetallic phases from the Au–Sn system. J. Alloy Compd. 491(1–2), 173–177 (2010)
G. Zeng, S. McDonald, K. Nogita, Development of high-temperature solders: review. Microelectron. Reliab. 52(7), 1306–1322 (2012)
X.S. Liu, K. Song, R.W. Davis, M.H. Hu, C.E. Zah, Design and Implementation of Metallization Structures for Epi-Down Bonded High Power Semiconductor Lasers. 2004 Electronic Components and Technology Conference, vol. 1 (2004), pp. 798–806
X.S. Liu, K.C. Song, R.W. Davis, L.C. Hughes, M.H. Hu, C.E. Zah, A metallization scheme for junction-down bonding of high-power semiconductor lasers. IEEE Trans. Adv. Pack. 29(3), 533–541 (2006)
http://www.indium.com/products/alloy_sorted_by_temperature.pdf
D.P. Seraphim, R. Lasky, C.Y. Li, Principles of Electronic Packaging (McGraw-Hill, New York, 1989)
J. Glazer, Metallurgy of low temperature Pb-free solders for electronic assembly. Int. Mater. Rev. 40(2), 65–93 (1995)
Z. Mei, J.W. Morris Jr., Superplastic creep of low melting point solder joints. J. Electron. Mater. 21(4), 401–407 (1992)
J.L. Freer, J.W. Morris Jr., Microstructure and creep of indium/tin on Cu and Ni substrates. J. Electron. Mater. 21(6), 647–652 (1992)
J. Seyyedi, Thermal fatigue behavior of low melting point solder joints. Soldering Surf. Mount Technol. 5(1), 26–32 (1993)
http://tersted.home.xs4all.nl/PDF_files/Heraeus/SMI98NoPb.pdf
G. Humpston, D.M. Jacobson, Principles of Soldering (ASM International, Metals Park, OH, 2004)
J.W. Wang, D. Hou, X.S. Liu, Introduction of packaging materials for high power semiconductor lasers. Internal Talk from Focuslight Technologies Co., Ltd. (2011), pp. 18–27
I. Karakaya, W.T. Thompson, The Ag-Sn (Silver-Tin) system. Bull. Alloy Phase Diagrams 8(4), 340–347 (1987)
N. Saunders, A.P. Miodownik, The Cu-Sn (Copper-Tin) system. Bull. Alloy Phase Diagrams 11(3), 278–287 (1990)
C.M. Miller, I.E. Anderson, J.F. Smith, A viable tin-lead solder substitute Sn-Ag-Cu. J. Electron. Mater. 23, 595–601 (1994)
M.E. Loomans, M.E. Fine, Tin-silver-copper eutectic temperature and composition. Metall. Mater. Trans. 31, 1155–1162 (2000)
K.W. Moon, W.J. Boettinger, U.R. Kattner, F.S. Biancaniello, C.A. Handwerker, Experimental and thermodynamic assessment of Sn-Ag-Cu solder alloys. J. Electron. Mater. 29, 1122–1136 (2000)
http://cmst.be/projects/imecat/documents/08_2004_Eurosime_Vandevelde_paper.pdf
J. Bartelo, S.R. Cain, D. Caletka, K. Darbha, T. Gosselin, D.W. Henderson, D. King, K. Knadle, A. Sarkhel, G. Thiel, C. Woychik, Thermomechanical Fatigue Behavior of Selected Lead Free Solders. 2nd Electronics Assembly Process Conference (2001)
P. Chalco, E. Blackshear, Reliability Issues of BGA Packages Attached With Lead-Free Solder. Proceedings InterPack01, The Pacific Rim/ASME International Electronic Packaging Technical Conference (2001), pp. 8–13
D. Bhate, D. Chan, G. Subbarayan, T.C. Chiu, V. Gupta, D.R. Edwards, Constitutive behavior of Sn3.8Ag0.7Cu and Sn1.0Ag0.5Cu alloys at creep and low strain rate regimes. IEEE Trans. Compon. Pack. Technol. 31(3), 622–633 (2008)
X.C. Tong, Advanced Materials for Thermal Management of Electronic Packaging (Springer Science + Business Media, LLC, New York, 2011)
G.P. Akishin, S.K. Turnaev, V.Y. Vaispapir, M.A. Gorbunova, Y.N. Makurin, V.S. Kiiko, A.L. Ivanovskii, Thermal conductivity of beryllium oxide ceramic. Refract. Ind. Ceram. 50(6), 465–468 (2009)
J.W. Wang, Z.B. Yuan, L.J. Kang, K. Yang, Y.X. Zhang, X.S. Liu, Study of the Mechanism of “Smile” in High Power Diode Laser Arrays and Strategies in Improving Near-field Linearity. 2009 Electronic Components and Technology Conference (2009), pp. 837–842
G.S. Jiang, L.Y. Diao, K. Kuang, Advanced Thermal Management Materials (Springer, Berlin, 2013)
R. Feeler, J. Junghans, G. Kemner, E. Stephens, Next-generation micro-channel coolers. Proc. SPIE 6876, 687608(1–8) (2008)
C. Zweben, New, low-CTE, ultrahigh-thermal-conductivity materials for lidar laser diode packaging. Proc. SPIE 58870D (1–10) (2005)
http://132.228.182.183/products/ceo_micro_cooled_diodes/assets/Ceramic_coolers_paper.pdf
K.E. Goodson, K. Kurabayashi, R. Fabian, W. Pease, Improved heat sinking for laser-diode arrays using micro-channels in CVD diamond. IEEE Trans. Compon. Pack. B 20(1), 104–109 (1997)
E.C. Yu, A.J. Przekwas, Thermomechanical Design of a Microchannel Cooled Semiconductor Laser Diode Array Package. Part of the SPIE Conference on Physics and Simulation of Optoelectronic Devices VII, vol. 3625 (1999), pp. 535–542
C. Zweben, New, low-CTE, ultra high-thermal-conductivity materials for lidar laser diode packaging. Proc. SPIE 58870D(1–10) (2005)
M. Leers, C. Scholz, K. Boucke, M. Oudart, Next Generation Heat Sinks for High-Power Diode Laser Bars. 23rd IEEE Semi-Thermal Symposium (2007), pp. 105–111
K. Watari, K. Ishizaki, F. Tsuchiya, Phonon-scattering and thermal conduction mechanisms of sintered aluminum nitride ceramics. J. Materi. Sci. 28(14), 3709–3714 (1993)
H. Nasery, M. Pugh, M. Medraj, Novel fabrication process of AlN ceramic matrix composites at low temperatures. Sci. Eng. Compos. Mater. 18(3), 117–125 (2011)
A. Hafidi, M. Billy, J.P. Lecompte, Influence of microstructural parameters on thermal-diffusivity of aluminum nitride-based ceramics. J. Mater. Sci. 27(12), 3405–3408 (1992)
D. de Faoite, D.J. Browne, F.R. Chang-Díaz, K.T. Stanton, A review of the processing, composition, and temperature-dependent mechanical and thermal properties of dielectric technical ceramics. J. Mater. Sci 47(10), 4211–4235 (2012)
J.H. Harris, R.A. Youngman, R.G. Teller, On the nature of the oxygen-related defect in aluminum nitride. J. Mater. Res. 5(8), 1763–1773 (1990)
H. Buhr, G. Muller, H. Wiggers, F. Aldinger, P. Foley, A. Roosen, Phase composition, oxygen content, and thermal conductivity of A1N(Y203) ceramics. J. Am. Ceram. Soc. 74(4), 718–723 (1991)
T.B. Jackson, A.V. Virkar, K.L. More, R.B. Dinwiddie, R.A. Cutler, High thermal conductivity aluminum nitride ceramics: the effect of thermodynamic, kinetic, and microstructural factors. J. Am. Ceram. Soc. 80(6), 1421–1435 (1997)
G.A. Slack, Nonmetallic crystals with high thermal conductivity. J. Phys. Chem. Solids 34(2), 321–335 (1973)
G.A. Slack, L.J. Schowalter, D. Morelli, J.A. Freitas, Some effects of oxygen impurities on AlN and GaN. J. Cryst. Growth 246(3–4), 287–298 (2002)
W. Koji, High thermal conductivity non-oxide ceramics. J. Ceram. Soc. Jpn. 109(1), S7–S16 (2001)
J.P. Sachet, J.Y. Laval, F. Lepoutre, A.C. Boccara, Thermal behaviour of grain boundaries in aluminium nitride ceramics. J. Phys. Colloq. 51(C1), 617–622 (1999)
K.J. Lodge, J.A. Sparrow, E.D. Perry, E.A. Logan, M.T. Goosey, D.J. Pedder, C. Montgomery, Prototype packages in aluminum nitride for high performance electronic systems. IEEE Trans. Compon. Hybr. 13(4), 633–638 (1990)
L. La Spina, E. Iborra, H. Schellevis, M. Clement, J. Olivares, L.K. Nanver, Aluminum nitride for heat spreading in RF IC’s. Solid-State Electron. 52(9), 1359–1363 (2008)
S.C. Carniglia, R.E. Johnson, A.C. Hott, G.G. Bentle, Hot pressing for nuclear applications of BeO; process, product, and properties. J. Nucl. Mater. 14, 378–394 (1964)
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Liu, X., Zhao, W., Xiong, L., Liu, H. (2015). Materials in High Power Semiconductor Laser Packaging. In: Packaging of High Power Semiconductor Lasers. Micro- and Opto-Electronic Materials, Structures, and Systems. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-9263-4_6
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