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Microstructure Evolution of Copper in Nanoscale Interconnect Features

  • James Kelly
  • Christopher Parks
  • James Demarest
  • Juntao Li
  • Christopher Penny
Chapter
Part of the Nanostructure Science and Technology book series (NST)

Abstract

The evolution of copper microstructure and incorporated impurities was studied using transmission electron microscopy (TEM), secondary ion mass spectroscopy (SIMS), and electrical resistance measurements for narrow (~28–40 nm) and wide Damascene features. Resistance measurements suggest an increasing degree of post-CMP microstructure evolution with anneal as linewidth falls below 100 nm for both “doped” and “pure” electrodeposited Cu. SIMS shows increased levels of incorporated sulfur and chlorine in narrow Cu lines whose concentration distributions appear unaffected by annealing at 350 °C, in contrast to redistribution observed in wider lines. Wide lines exhibit significant grain growth with a high temperature anneal, while little to no grain growth is evident upon anneal in narrow line longitudinal TEM sections. This post-anneal resistance drop and concomitant lack of recrystallization and grain growth in the narrow Cu lines is consistent with a microstructure recovery process, where defects in the Cu lattice are eliminated without appreciable formation and growth of new grains.

Keywords

Wide Line High Anneal Temperature Line Resistance Narrow Line Chemical Mechanical Planarization 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgments

This work was performed by the Research Alliance Teams at various IBM Research and Development Facilities. We are grateful to Dan Edelstein of IBM for critically reviewing the original manuscript. We also acknowledge useful discussions with Dr. Dan Josell of NIST.

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Copyright information

© Springer Science+Business Media New York 2014

Authors and Affiliations

  • James Kelly
    • 1
  • Christopher Parks
    • 2
  • James Demarest
    • 1
  • Juntao Li
    • 1
  • Christopher Penny
    • 1
  1. 1.IBM ResearchAlbanyUSA
  2. 2.IBM MicroelectronicsHopewell JunctionUSA

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