Abstract
The SRAM 6T cell typically is the most frequently used cell in designs requiring on-chip memory due to its fast access time and relatively small area. Its main function is to store data for the program to access; it retains the stored data so long as power is applied (volatile). The detail schematic of a 6T cell is shown in Fig. 4.1. Its design involves complex tradeoffs between the following seven factors [9, 27, 28].
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
Wilkes, M. The memory gap and the future of high performance memories, ACM Computer Architecture News, vol. 29, March 2001, pp. 2–7.
Weste, N. and Harris, D. CMOS VLSI Design: A Circuits and Systems Perspective, Addison-Wesley, 2005.
Rabaey, J.; Chandrakasan A.; Nikolic B.; Digital Integrated Circuits (2nd Edition), Jan 2003.
J. Bhavnagarwala et al. The impact of intrinsic device fluctuations on CMOS SRAM cell stability, IEEE J. Solid-State Circuits, volume 36, April 2001, pp. 658–665.
R. Kapre, K. Shakeri, H. Puchner, J. Tandigan, T. Nigam, K. Jang, M. V. R. Reddy, S. Lakshminarayanan, D. Sajoto, and M. Whately, SRAM Variability and Supply Voltage Scaling Challenges. IEEE, 2007, pp. 782–787.
Kumar, S.V., Kim, C.H., and Sapatnekar A. Impact of NBTI on SRAM Read Stability and Design for Reliability, in Proc. ISLPED, 2006.
Mohammad, B.; Bassett, P.; Aziz, A; and Abraham J. Cache Organization for Embedded Processors: CAM-vs-SRAM., IEEE International SOC Conference, September 2006, pp. 299–302.
Kao, J.; Chandrakasan, P. Dual-Threshold Voltage Techniques for Low-Power Digital Circuits, IEEE Journal of Solid-State Circuits, volume 35, July 2000, pp. 1009–1018.
Qualcomm Snapdragon S4 Mobile Processors, www.qualcomm.com/snapdragon, October 2011.
Amelifard, B; Fallah, F.; Pedram, M. Leakage minimization of SRAM cells in a dual-Vt and dual-Tox technology, Trans. On VLSI Systems, 2008.
Mukhopadhyay, S.; Mahmoodi, H, and Roy, K. Modeling of failure probability and statistical design of SRAM array for yield enhancement in nanoscaled CMOS, Proc. of TCAD, December 2005, pp. 1859–1880.
J. G. Massey. NBTI: what we know and what we need to know—a tutorial addressing the current understanding and challenges for the future, In IEEE International Integrated Reliability Workshop Final Report, 2004; pp. 199–211.
Chandarkasan, W.J., and Fox F. Design of High-Performance Microprocessir Circuits, IEEE Press 2000.
K.-L. C. K.-L. Cheng, C. C. Wu, Y. P. Wang, D. W. Lin, C. M. Chu, Y. Y. Tarng, S. Y. Lu, S. J. Yang, M. H. Hsieh, C. M. Liu, S. P. Fu, J. H. Chen, C. T. Lin, W. Y. Lien, H. Y. Huang, P. W. Wang, H. H. Lin, D. Y. Lee, M. J. Huang, C. F. Nieh, L. T. Lin, C. C. Chen, W. Chang, Y. H. Chiu, M. Y. Wang, C. H. Yeh, F. C. Chen, Y. H. Chang, S. C. Wang, H. C. Hsieh, M. D. Lei, K. Goto, H. J. Tao, M. Cao, H. C. Tuan, C. H. Diaz, Y. J. Mii, and C. M. Wu, A highly scaled, high performance 45 nm bulk logic CMOS technology with 0.242 amp;#x003BC;m2 SRAM cell. IEEE, 2007, pp. 243–246.
Kuhn, K. Reducing variation in advanced logic technologies: Approaches to process and design for manufacturability of nano scale CMOS, Proc. IEDM, December 2007, pp. 471–474.
Calhounm, A.; and Chandrakasan, A. Analyzing Static Noise Margin for sub-threshold SRAM in 65nm CMOS, ESSCIRC, September 2005, pp. 1673–1679.
Mohammad, B; Saint-Laurent, M; Bassett P.; Abraham J. Cache Design for Low Power and High Yield, ISQED, March 2008, pp. 103–107.
Author information
Authors and Affiliations
Rights and permissions
Copyright information
© 2014 Springer Science+Business Media New York
About this chapter
Cite this chapter
Mohammad, B. (2014). SRAM-Based Memory Operation and Yield. In: Embedded Memory Design for Multi-Core and Systems on Chip. Analog Circuits and Signal Processing, vol 116. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-8881-1_4
Download citation
DOI: https://doi.org/10.1007/978-1-4614-8881-1_4
Published:
Publisher Name: Springer, New York, NY
Print ISBN: 978-1-4614-8880-4
Online ISBN: 978-1-4614-8881-1
eBook Packages: EngineeringEngineering (R0)