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Synchrotron-Excited Photoluminescence Spectroscopy of Silicon- and Carbon-Containing Quantum Dots in Low Dimensional SiO\(_{2}\) Matrices

  • Anatoly F. ZatsepinEmail author
  • Evgeny A. Buntov
Chapter
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 187)

Abstract

A comprehensive method to study semiconductor nanoparticles in thin film SiO\(_{2}\) matrices has been developed. Selective and high-intensity synchrotron excitation allows the investigation of the nanoparticles energy structure. It is shown that the interference fringes affecting the optical excitation spectra of thin films may be neutralized by means of a special numerical technique. The spectral and kinetic properties of the Si, C, and SiC quantum dots (QD) formed by ion implantation in thin silica films were studied in details. Photoluminescence thermal quenching is shown to contain two stages and is dominated by Street law at low temperatures. Several indirect QD excitation mechanisms are realized, involving point defects, free, and self-trapped SiO\(_{2}\) matrix excitons. An exciton-assisted mechanism is dominating at helium temperatures. A resonant energy transfer mechanism taking place in the silica matrix reveals average defect-QD distance of 6–9 nm. A direct excitation channel is found only for carbon nanoclusters. An overall scheme of energy levels and optical transitions in the “matrix-cluster” system is proposed.

Keywords

Quantum dots Photoluminescence spectroscopy Synchrotron radiation Thin films 

Notes

Acknowledgments

We are grateful to our colleagues Prof. D.I. Tetelbaum, Prof. H.-J. Fitting and Prof. V.A. Pustovarov for useful collaboration during the acquisition of some results presented here.

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Copyright information

© Springer Science+Business Media New York 2013

Authors and Affiliations

  1. 1.Institute of Physics and TechnologyUral Federal UniversityEkaterinburgRussia

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