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Integration of Strain Free III–V Quantum Dots on Silicon

  • Stefano SanguinettiEmail author
  • Sergio Bietti
  • Giovanni Isella
Chapter
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 187)

Abstract

The great interest in the implementation of GaAs quantum nanostructures (QNs) on silicon substrates is mainly due to the possibility of integrating specialized high efficiency optoelectronic and photonic devices on the existing complementary metal-oxide semiconductor technology developed on Si. This would allow the realization of specialized III–V devices such as nanoemitters and intersubband detectors directly embedded with a large number of existing Si devices. Of particular, technological interest is the possibility of carrying out the III–V device fabrication after the integrated circuit has been already realized, i.e., as a back-end process. In this case, the compatibility with the underlying integrated circuit is possible only imposing strict constraints on thermal budget for growth and processing of the epilayer.

Keywords

Quantum dots Droplet epitaxy III–V on Si 

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Copyright information

© Springer Science+Business Media New York 2013

Authors and Affiliations

  • Stefano Sanguinetti
    • 1
    Email author
  • Sergio Bietti
    • 1
  • Giovanni Isella
    • 2
  1. 1.Dipartimento di Scienza dei MaterialiUniversita’ degli Studi di, Milano-BicoccaMilanoItaly
  2. 2.Politecnico di MilanoComoItaly

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