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Synthesis, Properties, and Applications of One-Dimensional Transition Metal Silicide Nanostructures

  • Guangwei She
  • Hailong Liu
  • Lixuan Mu
  • Wensheng ShiEmail author
Chapter
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 187)

Abstract

One-dimensional (1D) nanostructures of transition metal silicide (TMS) have attracted more attention due to their unique properties and potential applications in microelectronics. A variety of synthetic approaches were developed to fabricate 1D TMS nanostructures. Chemical vapor deposition (CVD) is the most widely used method to synthesize 1D TMS nanostructures. Various precursors and growth mechanisms are involved in the CVD processes. Other methods such as chemical vapor transport (CVT) method, silicidation method, reactive epitaxial method, hydrothermal method, were also successfully employed for the formation of 1D TMS nanostructures. Electrical transport measurements reveal that many TMS nanowires exhibit metallic behavior with extremely high conductivity. At the same time, semiconducting behaviors were observed in some situations. Some silicide nanowires (silicides of Fe, Co, Ni, Cr, Mn, etc.) have ferromagnetic properties, even at room temperature. Unique properties such as field-emission, optical, thermoelectric, mechanical were also investigated in the 1D TMS nanostructures. Based on these properties, 1D TMS nanostructures were utilized in microelectronic devices, lithium ion batteries, memory device and capacitor, etc.

Keywords

Transition metal silicide One-dimensional nanostructures Nanowire Chemical vapor deposition Chemical vapor transport Silicidation Epitaxial Endotaxial Growth mechanism  Vapor-liquid-solid Vapor-solid Diffusion Solid state reaction Precursors Electrical Metallic Semiconductor Ferromagnetic Paramagnetic Optical Ohmic contact Field effect transistor Lithium ion battery  Anode Electron collection Structural supporter Cell separation 

Notes

Acknowledgments

The authors would like to acknowledge financial support from the Chinese Academy of Sciences, NSFC (grant nos. 21103211, 50902134, 51272258, 51272302, and 61025003), National Basic Research Program of China (973 Program) (grant nos. 2010CB934103 and 2012CB932400) and Beijing Natural Science Foundation (grant no. 2102043).

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Copyright information

© Springer Science+Business Media New York 2013

Authors and Affiliations

  • Guangwei She
    • 1
  • Hailong Liu
    • 1
  • Lixuan Mu
    • 1
  • Wensheng Shi
    • 1
    Email author
  1. 1.Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and ChemistryChinese Academy of SciencesBeijingPeople’s Republic of China

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