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Analysis and Design of 3-D Potentiostat for Deep Brain Implantable Devices

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Neural Computation, Neural Devices, and Neural Prosthesis

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Abstract

We present the analysis and design of a 3-D potentiostat, an important part of the next generation of the deep brain implantable devices. The potentiostat with interfacing electrochemical sensor comprises a system for measurement of the concentration of the neurotransmitter molecules. We first introduce the architecture of a 2-D potentiostat implemented as the first-order incremental current-sensing sigma–delta converter. The fabricated design demonstrates a 100 fA sensitivity with dynamic range spanning through six orders of magnitude. The same architecture is transferred into 3-D technology with separate tiers for the analog and digital circuitry. The analysis of the 3-D design reveals that the sensitivity is limited by the TSV-related noise coupling.

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Authors and Affiliations

  1. Department of Electrical & Computer Engineering, Stony Brook University, Stony Brook, NY, 11790, USA

    M. Stanaćević, Y. Lin & E. Salman

Authors
  1. M. Stanaćević
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  2. Y. Lin
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  3. E. Salman
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Correspondence to M. Stanaćević .

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Editors and Affiliations

  1. National University of Singapore, Singapore, Singapore

    Zhi Yang

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Stanaćević, M., Lin, Y., Salman, E. (2014). Analysis and Design of 3-D Potentiostat for Deep Brain Implantable Devices. In: Yang, Z. (eds) Neural Computation, Neural Devices, and Neural Prosthesis. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-8151-5_11

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