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AlGaInAs Quantum Dots for Intermediate Band Formation in Solar Cell Devices

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Quantum Dot Solar Cells

Part of the book series: Lecture Notes in Nanoscale Science and Technology ((LNNST,volume 15))

Abstract

In this chapter, we focus on the integration of composition tailored AlGaInAs quantum dots (QDs) into AlGaAs p–i–n diode structures for solar cell (SC) applications. This type of QDs can absorb a wide range of the solar spectrum from the red visible to the near infrared spectral range. Moreover, the size, density, and eigenenergies of these quaternary QDs can be easily adjusted via varying their material composition, e.g. the aluminum content. We anticipate that the suitable choice of material composition, dot shape, and inter-dot barrier thickness can compensate the built-in potential of the p-i-n junction and electronic coupling between QD layers will be established to generate an electronically isolated intermediate band (IB). In order to probe the operation principle of an IBSC utilizing AlGaInAs QDs, two photon absorption measurements were performed. We show that two sub-bandgap photons produce photocurrent while the first photon pumps electrons from the valence band (VB) to the IB and a second photon lifts the electrons from the IB to the conduction band (CB). Based on our result we propose a route towards intermediate band solar cells (IBSCs) with these quaternary QDs.

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Acknowledgment

This work was supported by the state of Bavaria. The authors would like to thank N. Tarakina, T. Braun, M. Adams, M. Lermer, T. Steinl, A. Härtl, S. Reitzenstein, and L. Worschech for sample preparation, measurements, and fruitful discussions.

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Authors and Affiliations

  1. Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, 97074, Würzburg, Germany

    Stefan Kremling, Christian Schneider, Sven Höfling, Martin Kamp & Alfred Forchel

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  1. Stefan Kremling
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  2. Christian Schneider
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  3. Sven Höfling
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  4. Martin Kamp
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  5. Alfred Forchel
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Correspondence to Alfred Forchel .

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Editors and Affiliations

  1. State Key Laboratory of Electronic Thin, University of Electronic Science and Technology of China, Chengdu, China, People's Republic

    Jiang Wu

  2. State Key Laboratory of Electronic, University of Electronic Science and Technology, Chengdu, China, People's Republic

    Zhiming M. Wang

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Kremling, S., Schneider, C., Höfling, S., Kamp, M., Forchel, A. (2014). AlGaInAs Quantum Dots for Intermediate Band Formation in Solar Cell Devices. In: Wu, J., Wang, Z. (eds) Quantum Dot Solar Cells. Lecture Notes in Nanoscale Science and Technology, vol 15. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-8148-5_7

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  • DOI: https://doi.org/10.1007/978-1-4614-8148-5_7

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