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Interference Single Electron Transistors Based on Quantum Dot Molecules

  • Andrea DonariniEmail author
  • Milena Grifoni
Chapter
Part of the Lecture Notes in Nanoscale Science and Technology book series (LNNST, volume 14)

Abstract

We consider nanojunctions in the single electron tunnelling regime which, due to a high degree of spatial symmetry, have a degenerate many-body spectrum. They comprise single molecule quantum dots as well as artificial quantum dot molecules. As a consequence, interference phenomena which cause a current blocking can occur at specific values of the bias and gate voltage. We present here a general formalism providing necessary and sufficient conditions for interference blockade also in the presence of spin-polarized leads. As examples we analyze a triple quantum dot as well as a benzene molecule single electron transistor.

Keywords

Gate Voltage Degenerate State Current Blocking Molecular Junction Contact Atom 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgements

We would like to thank Dr. Georg Begemann and Dana Darau for their important contribution to the development of the research presented in this chapter. We also acknowledge the German Research Foundation (DFG) for the financial support through the research programs SPP 1243, SFB 689 and GRK 1570.

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Copyright information

© Springer Science+Business Media New York 2014

Authors and Affiliations

  1. 1.Theoretische PhysikUniversität RegensburgRegensburgGermany

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