Optical Properties of Lateral InGaAs Quantum Dot Molecules Single- and Bi-Layers

  • Songphol Kanjanachuchai
  • Nirat Patanasemakul
  • Natapong Thongkamkoon
  • Nitidet Thudsalingkarnsakul
  • Naparat Siripitakchai
  • Pornchai Changmoang
  • Supachok Thainoi
  • Somsak Panyakeow
Part of the Lecture Notes in Nanoscale Science and Technology book series (LNNST, volume 14)


Growth of InGaAs nanostructures by molecular beam epitaxy using partial-cap and regrowth technique results in an ensemble of lateral quantum dot molecules (QDMs). Each QDM comprises a large, central quantum dot and several small, satellite quantum dots which emit at different energies and exhibit qualitatively different optical behaviors. This chapter reviews, explains, and discusses the various fundamental aspects of lateral QDM single layers: the nucleation mechanism, the photoluminescent spectra, and the unique bimodal optical characteristics. The chapter ends by demonstrating the usefulness of lateral QDM bi-layers as a promising broadband near-infrared material.


Wetting Layer High Crystalline Quality Excitation Power Density Tunnel Coupling Energetic Position 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.



AFM data analyses are performed using Gwyddion. This work is supported by Thailand Research Fund (RSA5580015, DPG5380002); Nanotec; Integrated Innovation Academic Center (IIAC), Chulalongkorn University Centenary Academic Development Project; and the Higher Education Research Promotion and National Research University Project of Thailand, Office of the Higher Education Commission (CU56-EN09).


  1. 1.
    Leonard, D., Krishnamurthy, M., Reaves, C.M., Denbaars, S.P., Petroff, P.M.: Appl. Phys. Lett. 63, 3203 (1993)CrossRefGoogle Scholar
  2. 2.
    Bimberg, D., Grundmann, M., Ledentsov, N.N.: Quantum Dot Heterostructures. Wiley, Chichester (1999)Google Scholar
  3. 3.
    Wang, Z.M. (ed.): Self-Assembled Quantum Dots. Lecture Notes in Nanoscale Science and Technology. Springer, New York (2007)Google Scholar
  4. 4.
    Watanabe, K., Koguchi, N., Gotoh, Y.: Jpn. J. Appl. Phys. 39, L79 (2000)CrossRefGoogle Scholar
  5. 5.
    Wang, L., et al.: New J. Phys. 10, 045010 (2008)CrossRefGoogle Scholar
  6. 6.
    Wang, L., Rastelli, A., Kiravittaya, S., Benyoucef, M., Schmidt, O.G.: Adv. Mater. 21, 2601 (2009)CrossRefGoogle Scholar
  7. 7.
    Schedelbeck, G., Wegscheider, W., Bichler, M., Abstreiter, G.: Science 278, 1792 (1997)CrossRefGoogle Scholar
  8. 8.
    Bayer, M., Hawrylak, P., Hinzer, K., Fafard, S., Korkusinski, M., Wasilewski, Z.R., Stern, O., Forchel, A.: Science 291, 451 (2001)CrossRefGoogle Scholar
  9. 9.
    Loss, D., DiVincenzo, D.P.: Phys. Rev. A 57, 120 (1998)CrossRefGoogle Scholar
  10. 10.
    Songmuang, R., Kiravittaya, S., Schmidt, O.G.: Appl. Phys. Lett. 82, 2892 (2003)CrossRefGoogle Scholar
  11. 11.
    Lee, J.H., Wang, Z.M., Strom, N.W., Mazur, Y.I., Salamo, G.J.: Appl. Phys. Lett. 89, 202101 (2006)CrossRefGoogle Scholar
  12. 12.
    Strom, N.W., Wang, Z.M., Lee, J.H., AbuWaar, Z.Y., Mazur, Y.I., Salamo, G.J.: Nanoscale Res. Lett. 2, 112 (2007)CrossRefGoogle Scholar
  13. 13.
    Suraprapapich, S., Thainoi, S., Kanjanachuchai, S., Panyakeow, S.: J. Vac. Sci. Technol. B 23, 1217 (2005) [Ibid. 24, 1665 (2006)]CrossRefGoogle Scholar
  14. 14.
    Siripitakchai, N., Suraprapapich, S., Thainoi, S., Kanjanachuchai, S., Panyakeow, S.: J. Cryst. Growth 301, 812 (2007)CrossRefGoogle Scholar
  15. 15.
    Suraprapapich, S., Kanjanachuchai, S., Thainoi, S., Panyakeow, S.: Microelectron. Eng. 83, 1526 (2006)CrossRefGoogle Scholar
  16. 16.
    Lippen, T.v., Nötzel, R., Hamhuis, G., Wolter, J.: Appl. Phys. Lett. 85, 118 (2004)CrossRefGoogle Scholar
  17. 17.
    Lippen, T.v., Silov, A.Y., Notzel, R.: Phys. Rev. B 75, 115414 (2007)CrossRefGoogle Scholar
  18. 18.
    Thet, C.C., Sanorpim, S., Panyakeow, S., Kanjanachuchai, S.: Semicond. Sci. Technol. 23, 055007 (2008)CrossRefGoogle Scholar
  19. 19.
    Welsch, H., Kipp, T., Köppen, T., Heyn, C., Hansen, W.: Semicond. Sci. Technol. 23, 045016 (2008)CrossRefGoogle Scholar
  20. 20.
    Himwas, C., Panyakeow, S., Kanjanachuchai, S.: Nanoscale Res. Lett. 6, 496 (2011)CrossRefGoogle Scholar
  21. 21.
    Seravalli, L., Frigeri, P., Nasi, L., Trevisi, G., Bocchi, C.: J. Appl. Phys. 108, 064324 (2010)CrossRefGoogle Scholar
  22. 22.
    Nabetani, Y., Ishikawa, T., Noda, S., Sasaki, A.: J. Appl. Phys. 76, 347 (1994)CrossRefGoogle Scholar
  23. 23.
    Patanasemakul, N., Panyakeow, S., Kanjanachuchai, S.: Nanoscale Res. Lett. 7, 207 (2012)CrossRefGoogle Scholar
  24. 24.
    Krenner, H.J., Sabathil, M., Clark, E.C., Kress, A., Schuh, D., Bichler, M., Abstreiter, G., Finley, J.J.: Phys. Rev. Lett. 94, 057402 (2005)CrossRefGoogle Scholar
  25. 25.
    Scheibner, M., Yakes, M., Bracker, A.S., Ponomarev, I.V., Doty, M.F., Hellberg, C.S., Whitman, L.J., Reinecke, T.L., Gammon, D.: Nat. Phys. 4, 291 (2008)CrossRefGoogle Scholar
  26. 26.
    Beirne, G.J., Hermannstädter, C., Wang, L., Rastelli, A., Schmidt, O.G., Michler, P.: Phys. Rev. Lett. 96, 137401 (2006)CrossRefGoogle Scholar
  27. 27.
    Kanjanachuchai, S., Thudsalingkarnsakul, N., Siripitakchai, N., Changmoang, P., Thainoi, S., Panyakeow, S.: Microelectron. Eng. 87, 1352 (2010)CrossRefGoogle Scholar
  28. 28.
    Grundmann, M., Ledentsov, N.N., Stier, O., Bimberg, D., Ustinov, V.M., Kop'ev, P.S., Alferov, Z.I.: Appl. Phys. Lett. 68, 979 (1996)CrossRefGoogle Scholar
  29. 29.
    Mukai, K., Ohtsuka, N., Shoji, H., Sugawara, M.: Appl. Phys. Lett. 68, 3013 (1996)CrossRefGoogle Scholar
  30. 30.
    Lambkin, J.D., Dunstan, D.J., Homewood, K.P., Howard, L.K., Emeny, M.T.: Appl. Phys. Lett. 57, 1986 (1990)CrossRefGoogle Scholar
  31. 31.
    Heitz, R., Mukhametzhanov, I., Madhukar, A., Hoffmann, A., Bimberg, D.: J. Electron. Mater. 28, 520 (1999)CrossRefGoogle Scholar
  32. 32.
    Fafard, S., Raymond, S., Wang, G., Leon, R., Leonard, D., Charbonneau, S., Merz, J.L., Petroff, P.M., Bowers, J.E.: Surf. Sci. 361–362, 778 (1996)CrossRefGoogle Scholar
  33. 33.
    Szafran, B., Peeters, F.M.: Phys. Rev. B 76, 195442 (2007)CrossRefGoogle Scholar
  34. 34.
    Peng, J., Hermannstädter, C., Witzany, M., Heldmaier, M., Wang, L., Kiravittaya, S., Rastelli, A., Schmidt, O.G., Michler, P., Bester, G.: Phys. Rev. B 81, 205315 (2010)CrossRefGoogle Scholar
  35. 35.
    Thongkamkoon, N., Patanasemakul, N., Siripitakchai, N., Thainoi, S., Panyakeow, S., Kanjanachuchai, S.: J. Cryst. Growth 323, 206 (2011)CrossRefGoogle Scholar
  36. 36.
    Varshni, Y.P.: Physica 34, 149 (1967)CrossRefGoogle Scholar
  37. 37.
    Yeo, I., Dong Song, J., Lee, J.: Appl. Phys. Lett. 99, 151909 (2011)CrossRefGoogle Scholar
  38. 38.
    Brusaferri, L., et al.: Appl. Phys. Lett. 69, 3354 (1996)CrossRefGoogle Scholar
  39. 39.
    Lubyshev, D.I., Gonzalez-Borrero Jr., P.P., Marega, E., Petitprez Jr., E., La Scala, N., Basmaji, P.: Appl. Phys. Lett. 68, 205 (1996)CrossRefGoogle Scholar
  40. 40.
    Polimeni, A., Patane, A., Henini, M., Eaves, L., Main, P.C.: Phys. Rev. B 59, 5064 (1999)CrossRefGoogle Scholar
  41. 41.
    Xu, Z.Y., et al.: Phys. Rev. B 54, 11528 (1996)CrossRefGoogle Scholar
  42. 42.
    Yang, T., Tatebayashi, J., Tsukamoto, S., Nishioka, M., Arakawa, Y.: Appl. Phys. Lett. 84, 2817 (2004)CrossRefGoogle Scholar
  43. 43.
    Chia, C.K., Chua, S.J., Dong, J.R., Teo, S.L.: Appl. Phys. Lett. 90, 061101 (2007)CrossRefGoogle Scholar
  44. 44.
    Ngo, C.Y., Yoon, S.F., Fan, W.J., Chua, S.J.: Appl. Phys. Lett. 90, 113103 (2007)CrossRefGoogle Scholar
  45. 45.
    Kissel, H., Muller, U., Walther, C., Masselink, W.T., Mazur, Y.I., Tarasov, G.G., Lisitsa, M.P.: Phys. Rev. B 62, 7213 (2000)CrossRefGoogle Scholar
  46. 46.
    Lin, C.-F., Lee, B.-L.: Appl. Phys. Lett. 71, 1598 (1997)CrossRefGoogle Scholar
  47. 47.
    Haffouz, S., Raymond, S., Lu, Z.G., Barrios, P.J., Roy-Guay, D., Wu, X., Liu, J.R., Poitras, D., Wasilewski, Z.R.: J. Cryst. Growth 311, 1803 (2009)CrossRefGoogle Scholar
  48. 48.
    Greenwood, P.D.L., et al.: IEEE J. Sel. Topics Quantum Electron. 16, 1015 (2010)CrossRefGoogle Scholar
  49. 49.
    Schmitt, J.M.: IEEE J. Sel. Topics Quantum Electron. 5, 1205 (1999)CrossRefGoogle Scholar
  50. 50.
    Akahane, K., Yamamoto, N.: J. Cryst. Growth 323, 154 (2011)CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 2014

Authors and Affiliations

  • Songphol Kanjanachuchai
    • 1
  • Nirat Patanasemakul
    • 1
  • Natapong Thongkamkoon
    • 2
  • Nitidet Thudsalingkarnsakul
    • 1
  • Naparat Siripitakchai
    • 1
  • Pornchai Changmoang
    • 1
  • Supachok Thainoi
    • 1
  • Somsak Panyakeow
    • 1
  1. 1.Semiconductor Device Research Laboratory, Department of Electrical Engineering, Faculty of EngineeringChulalongkorn UniversityBangkokThailand
  2. 2.International School of Engineering, Faculty of EngineeringChulalongkorn UniversityBangkokThailand

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