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Atmospheric-Pressure Metalorganic Vapor Phase Epitaxy of GaAsBi Alloy on GaAs Substrate

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Bismuth-Containing Compounds

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 186))

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Abstract

This chapter deals with mainly the growth and the structural and optical characteristics of GaAsBi alloys. Firstly, the growth and the structural characteristic of GaAsBi alloys grown on GaAs substrate by conventional metalorganic vapor phase epitaxy technique have been investigated in detail and described in section “MOVPE Growth and Characterization of GaAsBi.” Secondly, a novel method to epitaxy GaAsBi layer on (001) GaAs substrate is presented in section “Growth and Characterization of GaAsBi Alloy Under Alternated Bismuth Flows.” Thirdly, the effects of thermal annealing on GaAs1 − x Bi x alloys are described in section “Effects of Thermal Annealing on GaAs1 − x Bi x Alloys.” Trimethyl gallium, trimethyl bismuth (TMBi), and arsine were used as precursor sources. Growth parameters such as growth temperature, TMBi flow and V/III ratio were checked on a wide range. The growth was monitored in situ by laser reflectometry using a 632.8 nm beam. High-resolution X-ray diffraction, secondary ion mass spectroscopy, photoluminescence, and photoreflectance spectroscopy have been used to characterize the obtained GaAsBi layers. In analyzing the surface morphology, atomic force microscopy and scanning electron microscopy were used to qualify films properties. Result shows that the solid composition of GaBi content in the GaAs1 − x Bi x alloy reaches a maximum value of about 4 %. A significant redshift in the emission of GaAsBi of ~42 meV per percent Bi is observed. The surface shows a Bi island formation on all the samples. The density and size of these islands depend greatly on the growth conditions and growth method.

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Authors and Affiliations

  1. Faculté des Sciences de Monastir, Université de Monastir-Unité de Recherche sur les Hétéro-Epitaxies et Applications, Monastir, 5019, Tunisia

    Hédi Fitouri, Ahmed Rebey & Belgacem El Jani

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  1. Hédi Fitouri
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  2. Ahmed Rebey
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  3. Belgacem El Jani
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Correspondence to Hédi Fitouri .

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Editors and Affiliations

  1. State Key Laboratory of Electronic Thin, University of Electronic Science and Technology of China, Chengdu, People's Republic of China

    Handong Li

  2. State Key Laboratory of Electronic, University of Electronic Science and Technology, Chengdu, People's Republic of China

    Zhiming M. Wang

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Fitouri, H., Rebey, A., El Jani, B. (2013). Atmospheric-Pressure Metalorganic Vapor Phase Epitaxy of GaAsBi Alloy on GaAs Substrate. In: Li, H., Wang, Z. (eds) Bismuth-Containing Compounds. Springer Series in Materials Science, vol 186. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-8121-8_5

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