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Electronic and Optical Properties of Domain Walls and Phase Boundaries in Bismuth Ferrite

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Bismuth-Containing Compounds

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 186))

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Abstract

Physical phenomena involving domain walls in BiFeO3 as nanoscale functional elements have recently received considerable attention. Their nanoscopic size and flexible arrangement using thin film growth engineering solutions and applied external electric fields offer unique possibilities for novel concepts in complex oxide nanoelectronics.

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  1. School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, Australia

    Jan Seidel

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  1. State Key Laboratory of Electronic Thin, University of Electronic Science and Technology of China, Chengdu, People's Republic of China

    Handong Li

  2. State Key Laboratory of Electronic, University of Electronic Science and Technology, Chengdu, People's Republic of China

    Zhiming M. Wang

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Seidel, J. (2013). Electronic and Optical Properties of Domain Walls and Phase Boundaries in Bismuth Ferrite. In: Li, H., Wang, Z. (eds) Bismuth-Containing Compounds. Springer Series in Materials Science, vol 186. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-8121-8_13

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