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Dilute Bismides for Mid-IR Applications

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Bismuth-Containing Compounds

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 186))

Abstract

Dilute bismides are a group of emerging materials with unique properties. Incorporation of a small amount of Bi in common III–V host materials results in large band-gap reduction and strong spin-orbit splitting, leading to potential applications in mid-infrared (Mid-IR) optoelectronics. In this chapter, we review recent progresses on epitaxy and characterizations of novel bismides, i.e., GaSb1 − x Bi x , InSb1 − x Bi x , InAs1 − x Bi x , and InAsSbBi. Although these dilute bismides have been successfully grown, to obtain high Bi incorporations and retain high crystal quality is still very challenging.

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Acknowledgements

The authors would like to thank Dr. Peixiong Shi from DANCHIP, Technical University of Denmark for SIMS measurements; Prof. Anders Hallen from ICT, Royal Institute of Technology for RBS measurements; Dr. Zonghe Lai and Ms. Ivy S. Roy from Chalmers University of Technology for TEM and AFM measurements; and Xiren Chen from Shanghai Institute of Technical Physics for PL measurements. The Swedish Research Council (VR) is acknowledged for financial support for this project.

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Authors and Affiliations

  1. Photonics Laboratory, Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology, Gothenburg, 412 96, Sweden

    Yuxin Song & Shumin Wang

  2. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China

    Yi Gu & Shumin Wang

  3. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, P. R. China

    Jun Shao

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  1. Yuxin Song
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Correspondence to Shumin Wang .

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  1. State Key Laboratory of Electronic Thin, University of Electronic Science and Technology of China, Chengdu, People's Republic of China

    Handong Li

  2. State Key Laboratory of Electronic, University of Electronic Science and Technology, Chengdu, People's Republic of China

    Zhiming M. Wang

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Song, Y., Gu, Y., Shao, J., Wang, S. (2013). Dilute Bismides for Mid-IR Applications. In: Li, H., Wang, Z. (eds) Bismuth-Containing Compounds. Springer Series in Materials Science, vol 186. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-8121-8_1

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