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Mass-Production Memories (DRAM and Flash)

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Atomic Layer Deposition for Semiconductors

Abstract

Dynamic random access memory (DRAM) works as the main memory in every modern computer, from high-end server computers to simple hand-held devices. Computing in any computer requires two key information sets; programs, and the data to program with. Both sets are stored as a form of ‘bits’ in the core memory part of a computer. Any computed output that comes from these actions is also stored as a data set within different parts of the memories that comprise the computer. Up to now, the conventional hard disk has been the primary memory element for all data storage (program and user data).

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Acknowledgments

The author acknowledges support of the IT R&D program of MKE/IITA, “Capacitor technology for next generation DRAMs having mass-production compatibility” 2009-F-013-01, and the Converging Research Center Program through the National Research Foundation of Korea (2012K001299) funded by the Ministry of Education, Science and Technology, Korea. CSH greatly appreciates the crucial help from postdoctoral fellows and graduate students in his group at Seoul National University.

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Authors and Affiliations

  1. Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 151-744, Korea

    Cheol Seong Hwang

  2. Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791, Republic of Korea

    Seong Keun Kim

  3. Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, 02138, USA

    Sang Woon Lee

Authors
  1. Cheol Seong Hwang
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  2. Seong Keun Kim
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  3. Sang Woon Lee
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Correspondence to Cheol Seong Hwang .

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Editors and Affiliations

  1. Department of Materials Science and Engi, Seoul National University, Seoul, Korea, Republic of (South Korea)

    Choel Seong Hwang

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© 2014 Springer Science+Business Media New York

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Hwang, C.S., Kim, S.K., Lee, S.W. (2014). Mass-Production Memories (DRAM and Flash). In: Hwang, C. (eds) Atomic Layer Deposition for Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4614-8054-9_4

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