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ALD Simulations

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Atomic Layer Deposition for Semiconductors

Abstract

Published papers on the simulation of the atomic layer deposition (ALD) process are reviewed. The main topic is reaction mechanism at the atomic scale, considering the elementary steps of precursor adsorption, ligand elimination, and film densification, as well as reactions with substrates (particularly Si and SiO2) and CVD-like decomposition reactions. Density functional theory (DFT) is the first principles method generally applied to these mechanistic questions. Analytical and stochastic models for growth rate and growth mode are also presented, some of which incorporate atomic scale data. Multiscale simulations of gas flow are used to investigate conformality in high aspect ratio features and uniformity of growth within a reactor. The most popular subject for modeling is the ALD of oxides and nitrides, particularly the high-k dielectrics HfO2, ZrO2, and Al2O3, due to their importance in semiconductor processing.

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Acknowledgments

Financial support from Science Foundation Ireland under “ALDesign”, 09.IN1.I2628, is gratefully acknowledged.

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Authors and Affiliations

  1. Tyndall National Institute, University College Cork, Dyke Parade, Cork, Ireland

    Simon D. Elliott

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  1. Simon D. Elliott
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Correspondence to Simon D. Elliott .

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Editors and Affiliations

  1. Department of Materials Science and Engi, Seoul National University, Seoul, Korea, Republic of (South Korea)

    Choel Seong Hwang

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Elliott, S.D. (2014). ALD Simulations. In: Hwang, C. (eds) Atomic Layer Deposition for Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4614-8054-9_3

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