Abstract
This chapter describes the use of random telegraph noise (RTN) to obtain information about traps in highly scaled MOSFETs. A robust hidden Markov model (HMM) algorithm is presented to enable the accurate extraction of trap parameters from both single and multiple-trap signals. The results of a large number of measurements show that even in the absence of bias stress, RTN-generating traps can cause serious variation for high-k/metal gate (HKMG) FETs and that undoped channels do not reduce the problem. Trap time constants are shown to have wide ranging dependence on bias and temperature, leading to hysteretic behavior with time constants much longer than the circuit timescale. The impact of RTN on the stability of memory cells is also presented, along with experimental observations of these effects in SRAM arrays.
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Notes
- 1.
To be precise, this description corresponds to an acceptor-type trap, but we prefer not to focus on the trap types because some traps defy easy categorization. Instead, we simply use the preceding definitions of “capture” and “emission” for all traps when plotting |I D | versus time.
- 2.
Some trap models involve three or four internal states but only two observable charge states. Those models can readily be incorporated into this framework, but are not explicitly considered here.
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Acknowledgments
We gratefully acknowledge the help and support of the many colleagues who contributed to the work discussed here, including N. Tega, M. Yamaoka, A. Bansal, M. Kobayashi, K. Cheng, C. P. D’Emic, Z. Ren, S. Wu, J.-B. Yau, Y. Zhu, M. A. Guillorn, D.-G. Park, W. Haensch, E. Leobandung, and K. Torii, and also the efforts of the staff of the IBM MRL and the Albany Nanotechnology facilities, where the samples were fabricated.
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Frank, D.J., Miki, H. (2014). Analysis of Oxide Traps in Nanoscale MOSFETs using Random Telegraph Noise. In: Grasser, T. (eds) Bias Temperature Instability for Devices and Circuits. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-7909-3_5
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DOI: https://doi.org/10.1007/978-1-4614-7909-3_5
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