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A Comprehensive Modeling Framework for DC and AC NBTI

  • Souvik Mahapatra
Chapter

Abstract

This chapter presents a comprehensive modeling framework to explain DC and AC NBTI experiments. The framework consists of uncorrelated contribution from interface trap generation, along with hole trapping in process-related preexisting and stress-induced generated bulk insulator traps. A wide range of experimental data, such as time evolution of degradation during and after DC stress, very long-time stress experiments, AC degradation as a function of pulse duty cycle and frequency, and measurement speed dependence of DC and AC NBTI, can be successfully explained for devices having wide range of gate insulator processes. Model equations and parameters have been listed.

Keywords

Gate Insulator Charge Pumping Interface Trap Negative Bias Temperature Instability Hole Trapping 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 2014

Authors and Affiliations

  1. 1.Department of Electrical EngineeringIndian Institute of Technology BombayMumbaiIndia

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