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Fundamentals of Nanoscaled Field Effect Transistors pp 153–167Cite as

Alternate Structures for Nanoelectronic Applications

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Abstract

In this chapter, a review of the alternate MOS structures at the nanoscale has been done. Various potential candidates have been discussed as a replacement to the conventional MOS structures such as dual gate, multiple gate, or quantum devices such as single-electron transistors or the ballistic devices or more recently the molecular electronic devices. This exploration is becoming more and more a strenuous exercise as the conventional MOS devices are failing due to the nanoscale effects as discussed in the earlier chapters and the underlying problems of the new devices which are being explored.

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Authors and Affiliations

  1. University Institute of Engineering and Technology Punjab University, Chandigarh, India

    Amit Chaudhry

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  1. Amit Chaudhry
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Chaudhry, A. (2013). Alternate Structures for Nanoelectronic Applications. In: Fundamentals of Nanoscaled Field Effect Transistors. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-6822-6_8

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  • DOI: https://doi.org/10.1007/978-1-4614-6822-6_8

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